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MMBD6050-G3-18

P1-P3P4-P5
MMBD6050-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 15-May-13
1
Document Number: 85419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
(1)
FR-5 = 1.0" x 0.75" x 0.062".
(2)
Alumina = 0.4" x 0.3" x 0.024" 99.5 % alumina
12
3
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
MMBD6050-G MMBD6050-G3-08 or MMBD6050-G3-18 Single diode 5AG Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
70 V
Forward current I
F
200 mA
Peak forward surge current I
FSM
500 mA
Maximum power dissipation on FR-5 board
(1)
P
tot
225 mW
Derate above 25 °C P
tot
1.8 mW/°C
Maximum power dissipation on alumina
substrate
(2)
P
tot
300 mW
Derate above 25 °C P
tot
2.4 mW/°C
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance FR-5 R
thJA
556 °C/W
Junction to ambient alumina R
thJA
417 °C/W
Maximum junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C
MMBD6050-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 15-May-13
2
Document Number: 85419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA V
(BR)
70 V
Forward voltage
I
F
= 1 mA V
F
0.55 0.7 V
I
F
= 100 mA V
F
0.85 1.1 V
Reverse leakage current V
R
= 50 V I
R
100 nA
Reverse recovery time I
F
= I
R
= 10 mA, i
R
= 1 mA t
rr
4ns
Diode capacitance V
R
= 0 C
D
2.5 pF
r - Dynamic Forward Resistance
f
(Ω)
10
100
1
1 10010
18861
I
F
- Forward Current (mA)
200
18889
T
amb
-Ambient Temperature ( °C)
500
400
300
200
100
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation ( mW )
tot
18662
1
10
100
1000
10000
r - Dynamic Forward Resistance
f
(Ω)
1100.10.01 100
I
F
- Forward Current (mA)
=25
°
CT
j
f=1kHz
18664
24680
1.1
1.0
0.9
0.8
0.7
10
C
D
(V
R
)/C
D
(0 V) - Relative Capacitance (pF)
V
R
- Reverse Voltage (V)
=25
°
CT
j
f=1MHz
MMBD6050-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 15-May-13
3
Document Number: 85419
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
18665
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160 180 200
I - Leakage Current ( nA )
R
T
j
-Junction Temperature ( ° C)
=20VV
R
10 101
-1
100
10
1
0.1
ν
/T T = 1/f=t
pp
I
FRM
t
p
T
t
I
ν
=0
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
18666
I - Admissible Repetitive
FRM
Peak Forward Current ( A )
t
p
-Pulse Length ( s )
P1-P3P4-P5

MMBD6050-G3-18

Mfr. #:
Buy MMBD6050-G3-18
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 70 Volt 200mA 4ns 500mA IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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