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BAW56LT3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1 Publication Order Number:
BAW56LT1/D
BAW56L, SBAW56L
Dual Switching Diode
Common Anode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
70 V
Forward Current I
F
200 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
2.0 A
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
I
FSM
4.0 A
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
FRM
500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave; T
j
= 25°C.
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
A1 M G
G
SOT−23 (TO−236)
CASE 318
STYLE 12
A1 = Device Code
M = Date Code*
G = Pb−Free Package
BAW56LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAW56LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
SBAW56LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAW56LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
www.onsemi.com
BAW56L, SBAW56L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage
(I
(BR)
= 100 mA)
V
(BR)
70 −
V
Reverse Voltage Leakage Current
(V
R
= 25 V, T
J
= 150°C)
(V
R
= 70 V)
(V
R
= 70 V, T
J
= 150°C)
I
R
−
−
−
30
2.5
50
mA
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 2.0
pF
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) (Figure 1) R
L
= 100 W
t
rr
− 6.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAW56L, SBAW56L
www.onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Curves Applicable to Each Cathode
0.001
t
P
, PULSE ON TIME (ms)
4
2
0
0.01 0.1 1 100
0
Figure 5. Forward Surge Current
10010
6
8
12
I
FSM
, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
T
J
= 25°C prior to surge
10
P1-P3P4-P4

BAW56LT3G

Mfr. #:
Buy BAW56LT3G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 70V 200mA
Lifecycle:
New from this manufacturer.
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