Jan2N3055

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/407

Devices Qualified Level

2N3055

JAN

JANTX

MAXIMUM RATINGS

Ratings Symbol Value Units

Collector-Emitter Voltage

V

CEO

70 Vdc

Collector-Base Voltage

V

CBO

100 Vdc

Emitter-Base Voltage

V

EBO

7.0 Vdc

Base Current

I

B

7.0 Adc

Collector Current

I

C

15 Adc

Total Power Dissipation @ T

A

= 25

0

C

(1)

@ T

C

= 25

0

C

(2)

P

T

6.0

117

W

W

Operating & Storage Temperature Range

T

op,

T

stg

-65 to +200

0

C

THERMAL CHARACTERISTICS

Characteristics Symbol Max. Unit

Thermal Resistance, Junction-to-Case

R

θJC

1.5

0

C/W

1) Derate linearly @ 34.2 mW/

0

C for T

A

> +25

0

C

2) Derate linearly @ 668 mW/

0

C for T

C

> +25

0

C

TO-3*

(TO-204AA)

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc

V

(BR)

CEO

70 Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, R

BE

= 100Ω

V

(BR)

CER

80 Vdc

Collector-Emitter Breakdown Voltage

V

BE

= -1.5 Vdc, I

C

= 200 mAdc

V

(BR)

CEX

90 Vdc

Collector-Emitter Cutoff Current

V

CE

= 60 Vdc

I

CEO

1.0 mAdc

Collector-Emitter Cutoff Current

V

BE

= -1.5 Vdc; V

CE

= 100 Vdc

I

CEX

1.0 mAdc

Emitter-Base Cutoff Current

V

EB

= 7.0 Vdc

I

EBO

1.0 mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3055 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

Forward-Current Transfer Ratio

I

C

= 0.5 Adc, V

CE

= 4.0 Vdc

I

C

= 4.0 Adc, V

CE

= 4.0 Vdc

I

C

= 10 Adc, V

CE

= 4.0 Vdc

h

FE

40

20

5.0

60

Collector-Emitter Saturation Voltage

I

C

= 4.0 Adc, I

B

= 0.4 Adc

I

C

= 10 Adc, I

B

= 3.3 Adc

V

CE(sat)

0.75

2.0

Vdc

Base-Emitter Saturation Voltage

I

C

= 4.0 Adc, V

CE

= 4.0 Vdc

V

BE(sat)

1.4 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 4.0 Adc, V

CE

= 4.0 Vdc, f = 100 kHz

h

fe



8.0 40

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

obo

700 pF

SWITCHING CHARACTERISTICS

Turn-On Time

V

CC

= 30 Vdc; I

C

= 4.0 Adc; I

B1

= 0.4 Adc

t

on

6.0

µs

Turn-Off Time

V

CC

= 30 Vdc; I

C

= 4.0 Adc; I

B1

= -I

B2

= 0.4 Adc

t

off

12

µs

SAFE OPERATING AREA

DC Tests

T

C

= +25

0

C, 1 Cycle, t = 1.0 s

Test 1

V

CE

= 7.8 Vdc, I

C

= 15 Adc

Test 2

V

CE

= 70 Vdc, I

C

= 1.67 Adc

Switching Tests

T

A

= +25

0

C; duty cycle ≤ 10%; R

S

≤ 0.1 Ω

Test 1

t

P

= 5.0 ms; R

BB1

= 2.0 Ω; V

BB

1

≥ 10 Vdc; R

BB2

= 100 Ω; V

CC

≥ 10 Vdc; V

BB2

= 1.5 Vdc; I

C

= 15 Adc

Test 2

t

P

= 20 ms; R

BB1

= 30 Ω; V

BB1

≥ 10 Vdc; R

BB2

= 100 Ω; V

CC

≥ 10 Vdc; V

BB2

= 1.5 Vdc; I

C

= 3.8 Adc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

Jan2N3055

Mfr. #:

Manufacturer:

Microchip / Microsemi

Description:

Bipolar Transistors - BJT Power BJT

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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