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SIA445EDJ-T1-GE3

P1-P3P4-P6P7-P9
Vishay Siliconix
SiA445EDJ
New Product
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Thermally Enhanced PowerPAK
®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
•100 % R
g
Tested
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing
- Battery Switch
- Charger Switch
- Load Switch
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) Max. I
D
(A) Q
g
(Typ.)
- 20
0.0165 at V
GS
= - 4.5 V
- 12
a
23 nC
0.0185 at V
GS
= - 3.7 V
- 12
a
0.0300 at V
GS
= - 2.5 V
- 12
a
PowerPAK SC-70-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
2.05 mm
2.05 mm
Ordering Information:
SiA445EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
S
D
G
Marking Code
X X X
B Q X
Lot Traceability
and Date code
Part # code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
- 20
V
Gate-Source Voltage V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 12
a
A
T
C
= 70 °C
- 12
a
T
A
= 25 °C
- 11.8
b, c
T
A
= 70 °C
- 9.5
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
- 50
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 12
a
T
A
= 25 °C
- 2.9
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
19
W
T
C
= 70 °C 12
T
A
= 25 °C
3.5
b, c
T
A
= 70 °C
2.2
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 5 s
R
thJA
28 36
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
5.3 6.5
www.vishay.com
2
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
Vishay Siliconix
SiA445EDJ
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 13
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
2.6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.5 - 1.2 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 60
µA
V
DS
= 0 V, V
GS
= ± 4.5 V
± 1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 7 A
0.0135 0.0165
Ω
V
GS
= - 3.7 V, I
D
= - 5 A
0.0150 0.0185
V
GS
= - 2.5 V, I
D
= - 5 A
0.0210 0.0300
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 7 A
29 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
2130
pFOutput Capacitance
C
oss
290
Reverse Transfer Capacitance
C
rss
280
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 12 A
48 72
nCGate-Source Charge
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 12 A
23 35
Q
gs
3.1
Gate-Drain Charge
Q
gd
6.7
Gate Resistance
R
g
f = 1 MHz 1.2 6 12 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 1 Ω
I
D
≅ - 9.5 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
25 50
ns
Rise Time
t
r
25 50
Turn-Off Delay Time
t
d(off)
55 110
Fall Time
t
f
20 40
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= - 10 V, R
L
= 1 Ω
I
D
≅ - 9.5 A, V
GEN
= - 10 V, R
g
= 1 Ω
715
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
60 120
Fall Time
t
f
17 35
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 12
A
Pulse Diode Forward Current
I
SM
- 50
Body Diode Voltage
V
SD
I
S
= - 9.5 A, V
GS
= 0 V
- 0.8 - 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 9.5 A, dI/dt = 100 A/µs,
T
J
= 25 °C
15 30 ns
Body Diode Reverse Recovery Charge
Q
rr
510nC
Reverse Recovery Fall Time
t
a
7
ns
Reverse Recovery Rise Time
t
b
8
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
www.vishay.com
3
Vishay Siliconix
SiA445EDJ
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
0
0.4
0.8
1.2
1.6
2.0
0 2 4 6 8 10 12 14 16
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5 3
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 5 V thru 3 V
V
GS
= 1.5 V
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 10 20 30 40 50
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 3.7 V
V
GS
= 4.5 V
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
0 3 6 9 12 15
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
4
8
12
16
20
0
0.5 - 0.5
1
1.5
2
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
oss
P1-P3P4-P6P7-P9

SIA445EDJ-T1-GE3

Mfr. #:
Buy SIA445EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Delivery:
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