TK7S10N1Z,LQ Datasheet TK7S10N1Z,LQ | P1-P3

TK7S10N1Z

1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK7S10N1Z

Start of commercial production

2014-01

1.

1. Applications

Applications

• Automotive

• Switching Voltage Regulators

• Motor Drivers

2.

2. Features

Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: R

DS(ON)

= 40 mΩ (typ.) (V

GS

= 10 V)

(3) Low leakage current: I

DSS

= 10 µA (max) (V

DS

= 100 V)

(4) Enhancement mode: V

th

= 2.0 to 4.0 V (V

DS

= 10 V, I

D

= 0.1 mA)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

DPAK+

1: Gate

2: Drain (heatsink)

3: Source

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Single-pulse avalanche current

Turn-off dV

DS

/dt ruggedness

Channel temperature

Storage temperature

(T

c

= 25)

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

E

AS

I

AS

dV

DS

/dt

T

ch

T

stg

Rating

100

±20

7

21

50

19.6

7

8.4

175

-55 to 175

Unit

V

A

W

mJ

A

V/ns



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2015-06-19

Rev.4.0

TK7S10N1Z

2

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Symbol

R

th(ch-c)

Max

3.0

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 175.

Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe

operating area is not only limited to thermal limits but also the current concentration phenomenon. This device

should not be used under conditions outside its safe operating area shown herein.

Note 3: V

DD

= 80 V, T

ch

= 25 (initial), L = 307 µH, R

G

= 25 Ω, I

AS

= 7 A

Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2015-06-19

Rev.4.0

TK7S10N1Z

3

6.

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

(Note 5)

Symbol

I

GSS

I

DSS

V

(BR)DSS

V

(BR)DSX

V

th

R

DS(ON)

Test Condition

V

GS

= ±16 V, V

DS

= 0 V

V

DS

= 100 V, V

GS

= 0 V

I

D

= 10 mA, V

GS

= 0 V

I

D

= 10 mA, V

GS

= -20 V

V

DS

= 10 V, I

D

= 0.1 mA

V

GS

= 10 V, I

D

= 3.5 A

Min



100

65

2.0



Typ.



40

Max

±10

10



4.0

48

Unit

µA

V

mΩ

Note 5: If a reverse bias is applied between gate and source, this device enters V

(BR)DSX

mode. Note that the drain-

source breakdown voltage is lowered in this mode.

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

C

iss

C

rss

C

oss

t

r

t

on

t

f

t

off

Test Condition

V

DS

= 10 V, V

GS

= 0 V, f = 1 MHz

See Figure 6.2.1.

Min



Typ.

470

36

260

4.6

12.7

6.2

22.7

Max



Unit

pF

ns

V

DD

≈ 50 V

V

GS

= 10 V/0 V

I

D

= 3.5 A

R

L

= 14.3 Ω

R

GS

= 10 Ω

R

GG

= 10 Ω

Duty ≤ 1 %, t

w

= 10 µs

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Q

g

Q

gs1

Q

gd

Test Condition

V

DD

≈ 80 V, V

GS

= 10 V, I

D

= 7 A

Min



Typ.

7.1

3

2.5

Max



Unit

nC

6.4.

6.4. Source-Drain Characteristics (T

Source-Drain Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Reverse drain current (DC)

Reverse drain current (pulsed)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

(Note 6)

(Note 7)

Symbol

I

DR

I

DRP

V

DSF

t

rr

Q

rr

Test Condition



I

DR

= 7 A, V

GS

= 0 V

I

DR

= 7 A, V

GS

= 0 V

-dI

DR

/dt = 50 A/µs

Min



Typ.



47

28

Max

7

21

-1.2



Unit

A

V

ns

nC

Note 6: Ensure that the channel temperature does not exceed 175.

Note 7: Ensure that V

DS

peak does not exceed V

DSS

.

2015-06-19

Rev.4.0

TK7S10N1Z,LQ

TK7S10N1Z,LQ

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