TIG062E8
No. A1480-1/5
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
•
Low-saturation voltage.
•
Low voltage drive (3V).
•
Enhansment type.
•
Built-in Gate-to-Emitter protection diode.
•
Mounting Height 0.9mm, Mounting Area 8.12mm
2
.
•
dv / dt guarantee
*
.
•
Halogen free compliance.
Specifi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Emitter Voltage V
CES
400 V
Gate-to-Emitter Voltage (DC) V
GES
±6 V
Gate-to-Emitter Voltage (Pulse) V
GES
PW≤1ms ±8 V
Collector Current (Pulse)
I
CP
1C
M
=150
μ
F, V
GE
=3V 100 A
I
CP
2C
M
=100
μ
F, V
GE
=3.3V 130 A
I
CP
3C
M
=100
μ
F, V
GE
=4V 150 A
Maximum Collector-to-Emitter dv / dt dV
CE
/ dt V
CE
≤320V, starting Tch=25
°
C 400 V /
μ
s
Channel Temperature Tch 150
°
C
Storage Temperature Tstg -40 to +150
°
C
Marking : ZC
*
: Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Ordering number : ENA1480A
O2109 TK IM TC-00002170 / 61009PJ MS IM TC-00001992
SANYO Semiconductors
DATA SHEET
TIG062E8
N-Channel IGBT
Light-Controlling Flash Applications
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