ACST4 Series
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Symbol Parameter Value Unit
V
DRM
/V
RRM
Repetitive peak off-state voltage Tj = -10 °C 700 V
I
T(RMS)
RMS on-state current full cycle sine
wave 50 to 60 Hz
DPAK Tc = 110 °C 4 A
TO-220FPAB Tc = 100 °C
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
F =50 Hz 30 A
F =60 Hz 33 A
I
2
t Fusing capability tp = 10ms 6.4 A²s
dI/dt Repetitive on-state current critical rate
of rise I
G
= 10mA (tr < 100ns)
Tj = 125°C
F = 120 Hz 50 A/µs
V
PP
Non repetitive line peak pulse voltage
note 1
2kV
Tstg Storage temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 30 to + 125 °C
Tl Maximum lead soldering temperature during 10s 260 °C
Note 1: according to test described by IEC61000-4-5 standard & Figure B.
ABSOLUTE RATINGS (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol Parameter Value Unit
P
G (AV)
Average gate power dissipation 0.1 W
P
GM
Peak gate power dissipation (tp = 20µs) 10 A
I
GM
Peak gate current (tp = 20µs) 1 V
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient S = 0.5cm² DPAK 70 °C/W
TO-220FPAB 60 °C/W
Rth (j-l) Junction to case for full cycle sine wave
conduction
DPAK 2.6 °C/W
TO-220FPAB 4.6 °C/W
S = Copper surface under Tab
THERMAL RESISTANCES
