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SFH619A-X007

P1-P3P4-P6
SFH619A
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Jan-12
1
Document Number: 83674
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output, High Gain, 300 V BV
CEO
DESCRIPTION
The SFH619A is optically coupled isolators with a gallium
arsenide infrared LED and a silicon photodarlington sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits. These
optocouplers can be used to replace reed and mercury
relays with advantages of long life, high speed switching and
elimination of magnetic fields.
FEATURES
• High collector emitter voltage, V
CEO
= 300 V
• High isolation test voltage: 5300 V
RMS
• Standard plastic DIP-4 package
• Compatible with Toshiba TLP627
• Compliant to RoHS Directive to 2002/95/EC
and in accordance WEEE 2002/96/EC
AGENCY APPROVALS
• UL - file no. E52744 system code H
• BSI IEC 60950; IEC 60065
•FIMKO
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on the end.
(2)
Option with 90° rotation.
i179062-3
1
2
4
3
E
C
A
C
i179060
ORDERING INFORMATION
SFH619A-X00#T #
PART NUMBER PACKAGE OPTION TAPE TAPE
AND AND
REEL REEL
OPTION
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, BSI, FIMKO ≥ 1000
DIP-4 SFH619A
SMD-4, option 7 SFH619A-X007T
(1)
SMD-4, option 9 SFH619A-X009T
(1)
SMD-4, option 9 SFH619A-X009T0
(2)
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
RM
6V
Forward continuous current I
F
60 mA
Derate linearly from 25 °C 1.33 mW/°C
Power dissipation P
diss
100 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
300 V
Emitter collector breakdown voltage BV
ECO
0.3 V
Collector (load) current I
C
125 mA
Derate linearly from 25 °C 2mW/°C
Power dissipation P
diss
150 mW
> 0.1 mm
> 0.7 mm
7.62 mm
DIP
Option 7
Option 9
SFH619A
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Jan-12
2
Document Number: 83674
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Derate linearly from 25 °C 3.33 mW/°C
Total power dissipation P
tot
250 mW
Isolation test voltage
between emitter and detector
t = 1 s V
ISO
5300 V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Soldering temperature
(1)
max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.2 1.5 V
Reverse current V
R
= 6 V I
R
0.02 10 μA
Capacitance V
R
= 0 V C
O
14 pF
OUTPUT
Collector emitter breakdown voltage I
CE
= 100 μA BV
CEO
300 V
Emitter collector breakdown voltage I
EC
= 100 μA BV
ECO
0.3 V
Collector emitter dark current
V
CE
= 200 V,T
A
= 25 °C I
CEO
10 200 nA
V
CE
= 200 V,T
A
= 100 °C I
CEO
20 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz C
CE
39 pF
COUPLER
Collector emitter saturation voltage
I
F
= 1 mA, I
C
= 10 mA V
CEsat
1V
I
F
= 10 mA, I
C
= 100 mA V
CEsat
0.3 1.2 V
Coupling capacitance V
I-O
= 0 V, f = 1 MHz C
C
0.6 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Coupling transfer ratio I
F
= 1 mA, V
CE
= 1 V CTR 1000 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise time
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100 Ω t
r
3.5 μs
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180 Ω t
r
1μs
Fall time
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100 Ω t
f
14.5 μs
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180 Ω t
f
20.5 μs
Turn-on time
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100 Ω t
on
4.5 μs
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180 Ω t
on
1.5 μs
Turn-off time
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100 Ω t
off
29 μs
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180 Ω t
off
53.5 μs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
SFH619A
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-Jan-12
3
Document Number: 83674
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Switching Waveform and Switching Schematic
Fig. 2 - Collector Current (mA) vs. Forward Current (mA)
Fig. 3 - Collector Current vs. Forward Current
Fig. 4 - Collector Current vs. Ambient Temperature
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1)
55/100/21
Comparative tracking index CTI 175 399
V
IOTM
10000 V
V
IORM
890 V
P
SO
400 mW
I
SI
275 mA
T
SI
175 °C
Creepage distance standard DIP-4 7 mm
Clearance distance standard DIP-4 7 mm
Creepage distance 400 mil DIP-4 8 mm
Clearance distance 400 mil DIP-4 8 mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1 0.4 mm
isfh619a_01
I
F
t
R
V
O
t
F
t
OFF
t
ON
V
CE
R
L
V
CC
I
F
isfh619a_03
V
CE
= 1.0 V
V
CE
= 1.2 V
1000
100
10
1
0.1
0.01
0 1 10 100
I
F
- Forward Current (mA)
I
C
- Collector Current (mA)
isfh619a_04
0 5 10 15 20 25 30 35 40 45 50
I
F
- Forward Current (mA)
I
C
- Collector Current (mA)
140
120
100
80
60
40
20
0
T = - 40 °C
A
T = - 100 °C
A
T = - 25 °C
A
isfh619a_05
90
80
70
60
50
40
30
20
10
0
- 40 - 20 0 20 40 60 80 100
I
F
= 10 mA
I
F
= 1 mA
I
F
- Forward Current (mA)
I
C
- Collector Current (mA)
P1-P3P4-P6

SFH619A-X007

Mfr. #:
Buy SFH619A-X007
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Photodarlington Out Single CTR > 1000%
Lifecycle:
New from this manufacturer.
Delivery:
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