CPDQR3-5V0UP Datasheet CPDQR3-5V0UP | P1-P3

CPDQR3-5V0UP

Page 1

QW-BP020

REV:C

Features

-Uni-directional ESD protection.

-(15kV) IEC 61000-4-2 rating.

-Surface mount package.

-Ultra small SMD package:0402-3P.

-High component density.

Mechanical data

-Case: 0402-3P standard package,

molded plastic.

-Terminals: ,solderable perNipd

MIL-STD-750,method 2026.

-Marking Code:

: 5P CPDQR3-5V0UP

-Mounting position: Any.

-Weight: 0.001 gram(approx.).

Comchip Technology CO., LTD.

Dimensions in inches and (millimeter)

0402-3P

-MARKING:

5P

-

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

IR = 1mA

Parameter

Symbol

Value

Unit

Diode breakdown voltage

VBD

V

6

pF

CT

Reverse leakage current

VR = 5V

4.5

Forward voltage

IF = 10mA

TJ

TSTG

-55 to +125

-55 to +150

°C

VR = 3.3V, f=1MHZ

IR

VF

5

1.2

uA

V

Storage temperature

Operating temperature

Junction capacitance

kV

20

ESD

ESD per IEC 61000-4-2(Air)

ESD per IEC 61000-4-2(Contact)

15

IPP

Peak pulse current ( tp = 8/20 us)

A

2

Peak pulse power ( tp = 8/20 us)

W

25

PPP

Clamping voltage

V

12.5

IPP = 2A,TP=8/20us

10

VC

VRWM

Reverse stand-Off voltage

V

0.25

7.1

8

0.06

1

VR = 0V, f=1MHZ

Electrical Characteristics (at TA=25°C unless otherwise noted)

0.043(1.10)

0.035(0.90)

0.028(0.70)

0.020(0.50)

0.020(0.50) Typ.

0.022(0.55)

0.016(0.40)

0.010(0.25) Typ.

Maximum Ratings (at TA=25°C unless otherwise noted)

RoHS Device

SMD ESD Protection Diode

2

3

1

Company reserves the right to improve product design , functions and reliability without notice.

Fig. 1 - Non-Repetitive Peak Pulse

Power vs. Pulse Time

RATING AND CHARACTERISTIC CURVES (CPDQR3-5V0UP)

Power rating (%)

O

Ambient temperature ( C)

Mounting on glass epoxy PCBs

0

20

40

60

80

100

120

25 50 75 100 1500 125

Fig. 2 - Power rating derating curve

Clamping voltage (V)

Fig. 3 - Clamping volatage vs.

peak pulse current

Peak pulse current (A)

2.5

2

0

8

10

12

14

16

4

6

1.51

0.5

0

8/20us waveform

2

f

=1MHz

TA=

25

°C

0

2

4

6

8

12

0 1 2 3 5

4

10

C

a

p

a

c

i

t

a

n

c

e

b

e

t

w

e

n

t

e

r

m

i

n

a

ls

(

P

F

)

Re

ver

se v

o

l

t

a

g

e (

V)

F

i

g.

5

-

C

a

p

a

c

i

t

a

n

c

e

b

e

t

w

e

n

t

erm

i

n

a

l

s

c

h

a

r

a

c

t

e

r

i

s

t

i

c

s

0.01

Peak Pulse Power-PPP(kw)

Pulse Duration-tp (us)

10

0.1 1 10010

0.1

1

Page 2

QW-BP020

REV:C

Comchip Technology CO., LTD.

Fig. 4 - Forward voltage vs.

forward current

Forward voltage (V)

Forward current (A)

15

2

0

8

10

12

4

6

96

3

0

8/20us waveform

12

SMD ESD Protection Diode

Company reserves the right to improve product design , functions and reliability without notice.

Page 3

QW-BP020

REV:C

Comchip Technology CO., LTD.

B C

d

D D

2

D

1

E F P P

0

P

1

T

0402

SYMBOL

A

W W

1

(mm)

(inch)

0.027 0.004± 0.047 0.004± 0.026 0.004± 0.059 0.004±

7.008 0.04±

2.362 MIN.

0.512 0.008±

0402

SYMBOL

(mm)

(inch)

0.069 0.004± 0.138 0.002±

0.157 0.004± 0.157 0.004±

0.079 0.002± 0.01 0.001± 0.315 0.012±

0.531 MAX.

0.69 0.10±

1.19 0.10±

4.00 0.10±

1.50 0.10±

3.50 0.05±1.75 0.10±

60.0 MIN. 13.0 0.20±0.66 0.10±

4.00 0.10± 2.00 0.05± 0.254 0.02±

8.00 0.30±

13.5 MAX.

178 1±

SMD ESD Protection Diode

o

1

2

0

Trailer Device Leader

10 pitches (min)10 pitches (min)

.......

....... ..............

End

Start

D1

D2

D

W1

T

C

Direction of Feed

Reel Taping Specification

Index hole

d

E

F

B

W

P

P0

P1

A

Company reserves the right to improve product design , functions and reliability without notice.

CPDQR3-5V0UP

CPDQR3-5V0UP

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