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NTB6412ANG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
1 Publication Order Number:
NTB6412AN/D
NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
100 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Continuous Drain Cur
-
rent R
q
JC
Steady
State
T
C
= 25°C
I
D
58
A
T
C
= 100°C 41
Power Dissipation
R
q
JC
Steady
State
T
C
= 25°C P
D
167 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
240 A
Operating Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
58 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 44.7 A, L = 0.3 mH, R
G
= 25 W)
E
AS
300 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) Steady State
R
q
JC
0.9
°C/W
Junction−to−Ambient (Note 1)
R
q
JA
33
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
www.onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
6412AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
(Note 1)
100 V
18.2 mW @ 10 V
58 A
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
NTP
6412ANG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
NTB
6412ANG
AYWW
G
S
D
N−Channel
NTB6412AN, NTP6412AN, NVB6412AN
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
100 V
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V
(BR)DSS
/T
J
103 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 mA
2.0 4.0 V
Negative Threshold Temperature Coefficient V
GS(th)
/T
J
9.2 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 58 A 16.8 18.2
mW
V
GS
= 10 V, I
D
= 20 A 15.6 18.2
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 20 A 31 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
2700 3500
pF
Output Capacitance C
oss
400 500
Reverse Transfer Capacitance C
rss
150
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 80 V,
I
D
= 58 A
73 100
nC
Threshold Gate Charge Q
G(TH)
2.5
Gate−to−Source Charge Q
GS
13.5
Gate−to−Drain Charge Q
GD
35
Plateau Voltage V
GP
5.6 V
Gate Resistance R
G
2.2
W
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 58 A, R
G
= 6.2 W
16
ns
Rise Time t
r
140
Turn−Off Delay Time t
d(off)
70
Fall Time t
f
126
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
I
S
= 58 A
T
J
= 25°C 0.96 1.3
V
T
J
= 125°C 0.89
Reverse Recovery Time t
rr
V
GS
= 0 V, I
S
= 58 A,
dI
SD
/dt = 100 A/ms
85
ns
Charge Time t
a
60
Discharge Time t
b
25
Reverse Recovery Charge Q
RR
270 nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTB6412AN, NTP6412AN, NVB6412AN
www.onsemi.com
3
0
20
40
60
80
100
120
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
T
J
= 25°C
V
GS
= 4.4 V
10 V
7.5 V
6.5 V
6.0 V
5.4 V
5.0 V
0
20
40
60
80
100
120
234567
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
w 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
0.01
0.02
0.03
0.04
5678910
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 3. On−Region versus Gate Voltage
I
D
= 58 A
T
J
= 25°C
0
0.01
0.02
0.03
0.04
0.05
0.06
10 20 30 40 50 6
0
T
J
= 125°C
T
J
= 175°C
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.5
1
1.5
2
2.5
3
−50 −25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 58 A
V
GS
= 10 V
100
1000
10000
100000
10 20 30 40 50 60 70 80 90 10
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
P1-P3P4-P6P7-P7

NTB6412ANG

Mfr. #:
Buy NTB6412ANG
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 100V 58A D2PAK
Lifecycle:
New from this manufacturer.
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