SFH615AY-X009T

SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-May-13
1
Document Number: 83672
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, High Reliability, 5300 V
RMS
DESCRIPTION
The SFH615XXX features a large assortment of current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8 mm are achieved
with option 6. This version complies with 60950
(DIN VDE 0805) for reinforced insulation up to operation
voltage of 400 V
RMS
or DC.
FEATURES
Low CTR degradation
Good CTR linearity depending on forward
current
Isolation test voltage, 5300 V
RMS
High collector emitter voltage, V
CEO
= 70 V
Low saturation voltage
Fast switching times
Temperature stable
Low coupling capacitance
End stackable, 0.100" (2.54 mm) spacing
High common mode interference immunity (unconnected
base)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-5 (VDE 0884) available with option 1
BSI IEC 60950; IEC 60065
Note
Additional options may be possible, please contact sales office.
i179060_1
1
2
4
3
E
C
A
C
i179060
ORDERING INFORMATION
SFH615AxxX00#
PART NUMBER PACKAGE OPTION
AGENCY
CERTIFIED/PACKAGE
CTR (%)
5 mA
UL, VDE, BSI 50 to 600 80 to 260 200 to 600 200 to 400 100 to 600 100 to 300 50 to 150
DIP-4 SFH615AA SFH615AB SFH615ABL SFH615ABM SFH615AGB SFH615AGR SFH615AY
DIP-4, 400 mil, option 6
SFH615AA-
X006
--
SFH615ABM-
X006
-
SFH615AGR-
X006
SFH615AY-
X006
SMD-4, option 7
SFH615AA-
X007
--
SFH615ABM-
X007
SFH615AGB-
X006
SFH615AGR-
X007
-
SMD-4, option 8 ------
SFH615AY-
X008
SMD-4, option 9 - - - -
SFH615AGB-
X006
-
SFH615AY-
X009
7.62 mm
DIP-#
> 0.7 mm
Option 7
10.16 mm
Option 6
> 0.1 mm
Option 9
9.27 mm
Option 8
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-May-13
2
Document Number: 83672
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
DC forward current I
F
60 mA
Surge forward current t
P
10 ms I
FSM
2.5 A
Power dissipation P
diss
100 mW
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current
I
C
50 mA
t
P
10 ms I
C
100 mA
Total power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector
V
ISO
5300 V
RMS
Creepage distance 7mm
Clearance distance 7mm
Isolation thickness between emitter
and detector Comparative tracking
index per DIN IEC 112/VDE 0303, part 1
CTI 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Soldering temperature
(1)
max. 10 s, dip soldering distance
to seating plane 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
13 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
5.2 pF
Thermal resistance R
thja
500 K/W
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.4 pF
COUPLER
Collector emitter leakage
current
V
CEO
= 10 V
SFH615AA I
CEO
10 100 nA
SFH615AGB I
CEO
10 100 nA
SFH615AGR I
CEO
10 100 nA
SFH615ABM I
CEO
10 100 nA
SFH615ABL I
CEO
10 100 nA
SFH615AY I
CEO
10 100 nA
SFH615AB I
CEO
10 100 nA
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-May-13
3
Document Number: 83672
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Switching Operation (with Saturation)
Fig. 2 - Current Transfer Ratio (Typ.) vs. Temperature
Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 4 - Permissible Diode Forward Current vs.
Ambient Temperature
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
SFH615AA CTR 50 600 %
SFH615AGB CTR 100 600 %
SFH615AGR CTR 100 300 %
SFH615ABM CTR 200 400 %
SFH615ABL CTR 200 600 %
SFH615AY CTR 50 150 %
SFH615AB CTR 80 260 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time I
F
= 5 mA t
on
s
Turn-off time I
F
= 5 mA t
off
25 μs
isfh615aa_01
1kΩ
V
CC
=5V
47 Ω
I
F
%
10
3
5
10
2
10
1
- 25 7525050°C
5
T
A
isfh615aa_02
I
F
= 10 mA, V
CC
= 5.0 V
1
2
3
4
I
C
I
F
0
5
10
15
20
pF
10
-2
10
-1
10
0
10
1
10
2
V
C
V
e
isfh615aa_03
f = 1.0 MHz
C
CE
mA
0
30
60
90
120
0 50 1007525 °C
I
F
T
A
isfh615aa_04

SFH615AY-X009T

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR > 50-150%
Lifecycle:
New from this manufacturer.
Delivery:
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