SI1032R-T1-GE3

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Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Vishay Siliconix
Si1032R/X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71172
.
Threshold Voltage Variance vs. Temperature
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50 - 25 0 25 50 75 100 125
I
D
= 0.25 mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
GSS
vs. Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125
T
J
- Temperature (°C)
I
GSS
- (µA)
V
GS
= 2.8 V
BV
GSS
vs. Temperature
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective
Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 500 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Package Information
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Vishay Siliconix
Revision: 08-Aug-11
1
Document Number: 71348
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3-LEADS
Notes
Dimensions in millimeters will govern.
1. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2. Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
5. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
M
BA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
D
bbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B
5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
MILLIMETERS
DIM. MIN. NOM. MAX. NOTE
A- -0.80
A
1
0.00 - 0.10
A
2
0.65 0.70 0.80
B
1
0.19 - 0.24 5
b
1
0.17 - 0.21
c 0.13 - 0.15 5
c
1
0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E
1
0.66 0.76 0.86 1, 2
e
1
0.50 BSC
e
2
1.00 BSC
e
3
0.50 BSC
L 0.15 0.205 0.30
L
1
0.40 REF
L
2
0.15 BSC
-
1
- 10°
ECN: E11-2210-Rev. D, 08-Aug-11
DWG: 5868
D
3
2
b
1
e1
e
A
C
L
H
E
X
DETAIL X
Package Information
Vishay Siliconix
Document Number: 71377
06-Jul-01
www.vishay.com
1
SC89Ć3
MILLIMETERS INCHES
Dim Min Max Min Max
A
0.60 0.80 0.024 0.031
b
0.23 0.33 0.009 0.013
C
0.10 0.20 0.004 0.008
D
1.50 1.70 0.059 0.067
E
0.75 0.95 0.030 0.037
e
1.00 BSC 0.040 BSC
e
1
0.50 BSC 0.020 BSC
H
1.50 1.70 0.059 0.067
L
0.30 0.50 0.012 0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869

SI1032R-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V
Lifecycle:
New from this manufacturer.
Delivery:
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