SI1032X-T1-E3 Datasheet SI1032R-T1-GE3, SI1032X-T1-GE3, SI1032R-T1-E3 | P1-P3

Vishay Siliconix

Si1032R/X

Document Number: 71172

S10-2544-Rev. F, 08-Nov-10

www.vishay.com

1

N-Channel 1.5 V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Low-Side Switching

• Low On-Resistance: 5 

• Low Threshold: 0.9 V (typ.)

• Fast Switching Speed: 35 ns

• TrenchFET

®

Power MOSFETs: 1.5 V Rated

• 2000 V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(mA)

20

5 at V

GS

= 4.5 V

200

7 at V

GS

= 2.5 V

175

9 at V

GS

= 1.8 V

150

10 at V

GS

= 1.5 V

50

Ordering Information:

Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)

Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free)

Top View

2

1

S

D

G

3

Marking Code: G

SC-75A or SC-89

Notes:

a. Surface mounted on FR4 board.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol

Si1032R Si1032X

Unit

5 s Steady State 5 s Steady State

Drain-Source Voltage

V

DS

20

V

Gate-Source Voltage

V

GS

± 6

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

200 140 210 200

mA

T

A

= 85 °C

110 100 150 140

Pulsed Drain Current

a

I

DM

500 600

Continuous Source Current (Diode Conduction)

a

I

S

250 200 300 240

Maximum Power Dissipation

a

for SC-75

T

A

= 25 °C

P

D

280 250 340 300

mW

T

A

= 85 °C

145 130 170 150

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

www.vishay.com

2

Document Number: 71172

S10-2544-Rev. F, 08-Nov-10

Vishay Siliconix

Si1032R/X

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

SPECIFICATIONS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.40 0.7 1.2 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 2.8 V

± 0.5 ± 1.0

µA

V

DS

= 0 V, V

GS

= ± 4.5 V

± 1.0 ± 3.0

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

1

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

= 5 V, V

GS

= 4.5 V

250 mA

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 200 mA

5



V

GS

= 2.5 V, I

D

= 175 mA

7

V

GS

= 1.8 V, I

D

= 150 mA

9

V

GS

= 1.5 V, I

D

= 40 mA

10

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 200 mA

0.5 S

Diode Forward Voltage

a

V

SD

I

S

= 150 mA, V

GS

= 0 V

1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 250 mA

750

pCGate-Source Charge

Q

gs

75

Gate-Drain Charge

Q

gd

225

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 10 V, R

L

= 47 

I

D

 200 mA, V

GEN

= 4.5 V, R

g

= 10 

50

ns

Rise Time

t

r

25

Turn-Off Delay Time

t

d(off)

50

Fall Time

t

f

25

Output Characteristics

0.0

0.1

0.2

0.3

0.4

0.5

0123456

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)

I

D

V

GS

= 5 V thru 1.8 V

1 V

Transfer Characteristics

0

100

200

300

400

500

600

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (mA)I

D

T

J

= - 55 °C

125 °C

25 °C

Document Number: 71172

S10-2544-Rev. F, 08-Nov-10

www.vishay.com

3

Vishay Siliconix

Si1032R/X

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Surge-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0

10

20

30

40

50

0 50 100 150 200 250

I

D

- Drain Current (mA)

V

GS

= 1.8 V

V

GS

= 4.5 V

V

GS

= 2.5 V

0

1

2

3

4

5

0.0 0.2 0.4 0.6 0.8

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 10 V

I

D

= 150 mA

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1000

1

V

SD

)V( egatloV niarD-ot-ecruo- S

- Source Current (mA)

I

S

T

J

= 125 °C

T

J

= 25 °C

T

J

= 50 °C

10

100

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

20

40

60

80

100

048 12 16 20

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

oss

C

iss

V

GS

= 0 V

f = 1 MHz

C - Capacitance (pF)

0.60

0.80

1.00

1.20

1.40

1.60

- 50 - 25 0 25 50 75 100 125

V

GS

= 4.5 V

I

D

= 200 mA

T

J

- Junction Temperature (°C)

V

GS

= 1.8 V

I

D

= 175 mA

R

DS(on)

-

On-Resistance

(Normalized)

0

10

20

30

40

50

0123456

I

D

= 175 mA

- On-Resistance (Ω)

R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 200 mA

SI1032X-T1-E3

SI1032X-T1-E3

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