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S12BR

P1-P2
V
RRM
= 50 V - 1200 V
I
F
=12 A
Features
• High Surge Capability DO-4 Package
• Types up to 1200 V V
RRM
Parameter Symbol S12B (R) S12D (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
100 200 V
S12B thru S12JR
S12J (R)
400
S12G (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
600
pp g
RMS reverse voltage
V
RMS
70 140 V
DC blocking voltage
V
DC
100 200 V
Continuous forward current
I
F
12 12 A
Operating temperature
T
j
-65 to 175 -65 to 175 °C
Storage temperature
T
stg
-65 to 200 -65 to 200 °C
Parameter Symbol S12B (R) S12D (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
12 12 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
2.50 2.50 °C/W
12
A280
Reverse current
I
R
V
F
280
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 144 °C
Conditions
280
280 280
-65 to 200
12 12
-65 to 200
S12J (R)
10 10
S12G (R)
2.50
V
R
= 50 V, T
j
= 175 °C
2.50
1.1 1.1
12
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 175 -65 to 175
T
C
= 25 °C, t
p
= 8.3 ms
420
600400
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
S12B thru S12JR
www.genesicsemi.com
2
P1-P2

S12BR

Mfr. #:
Buy S12BR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 100V 12A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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