TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 1 Version: C15
P-Channel Power MOSFET
-20V, -2.8A, 130mΩ
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-
resistance
Application
● Telecom power
● Consumer Electronics
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
V
DS
-20 V
R
DS(on)
(max)
V
GS
= -4.5V
130
mΩ
V
GS
= -2.5V
190
Q
g
7.2 nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
-2.8
A
T
C
= 100°C -1.6
Pulsed Drain Current
(Note 2)
I
DM
-10 A
Continuous Source Current (Diode Conduction)
(Note 3)
I
S
-1 A
Total Power Dissipation
T
A
= 25°C
P
DTOT
0.7
W
T
A
= 70°C 0.45
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Ambient Thermal Resistance (PCB mounted) R
ӨJA
175 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
