FDS4435A

FDS4435A
FDS4435A Rev. D
FDS4435A
P-Channel Logic Level PowerTrench
MOSFET
October 2001
Features
-9 A, -30 V. R
DS(ON)
= 0.017 W @ V
GS
= -10 V
R
DS(ON)
= 0.025 W @ V
GS
= -4.5 V
Low gate charge (21nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
ã2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current - Continuous (Note 1a) -9 A
- Pulsed -50
P
D
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 25
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS4435A FDS4435A 13’’ 12mm 2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductors advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
FDS4435A
FDS4435A Rev. D
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
µ
A
-30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
µ
A,Referenced to 25
°
C
-26
mV/
°
C
V
DS
= -24 V, V
GS
= 0 -1I
DSS
Zero Gate Voltage Drain Current
T
J
= 125
°
C
-10
µ
A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -20 V, V
DS
= 0 V -100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250
µ
A
-1 -1.7 -2 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
µ
A,Referenced to 25
°
C
4.2
mV/
°
C
V
GS
= -10 V, I
D
= -9 A 0.015 0.017
T
J
= 125
°
C 0.021 0.030
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -7 A 0.023 0.025
I
D(on)
On-State Drain Current V
GS
= -10 V, V
DS
= -5 V -40 A
g
FS
Forward Transconductance V
DS
= -10 V, I
D
= -9 A 25 S
Dynamic Characteristics
C
iss
Input Capacitance 2010 pF
C
oss
Output Capacitance 590 pF
C
rss
Reverse Transfer Capacitance
V
DS
= -15 V, V
GS
= 0 V
f = 1.0 MHz
260 pF
Switching Characteristics (Note 2)
t
d(on)
Turn-On Delay Time 12 22 ns
t
r
Turn-On Rise Time 15 27 ns
t
d(off)
Turn-Off Delay Time 100 140 ns
t
f
Turn-Off Fall Time
V
DD
= -15 V, I
D
= -1 A
V
GS
= -10 V, R
GEN
= 6
55 80 ns
Q
g
Total Gate Charge 21 30 nC
Q
gs
Gate-Source Charge 6 nC
Q
gd
Gate-Drain Charge
V
DS
= -15 V, I
D
= -9 A
V
GS
= -5 V,
8nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -2.1 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -2.1 A (Note 2) 0.75 -1.2 V
t
rr
Source-Drain Reverse Recovery Time
I
F
= -10 A, dl
F
/dt = 100 A/
µ
S
36 80 ns
Notes:
1: R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
qJC
is guaranteed by design while R
qCA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W when mounted
on a minimum pad.
FDS4435A
FDS4435A Rev. D
Typical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 1020304050
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-4.5V
-4.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
10
20
30
40
012345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
J
= -55
O
C
25
O
C
125
O
C
V
DS
= -5V
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON RESISTANCE (OHM)
T
J
= 125
O
C
T
J
= 25
O
C
I
D
= -4.5A
-V , DRAIN-SOURCE VOLTAGE (V)
- I , DRAIN-SOURCE CURRENT (A)
DS
D
-4.5V
-2.5V
-4.0V
-6.0V
-3.5V
-3.0V
V = -10V
GS
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
O
C)
NORMALIZED ON-RESISTANCE
V
GS
= -10V
I
D
= -9A

FDS4435A

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8 P-CH -30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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