© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
20
30
40
50
60
70
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
120
t
d
on
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
35
40
45
50
55
60
65
70
75
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 27.5V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
0
10
20
30
40
50
60
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 27.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
50
100
150
200
250
300
350
400
450
500
2 3 4 5 6 7 8 9 101112131415
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
400
450
500
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 27.5V
I
D
= 100A, 200A
IXTH360N055T2
IXTT360N055T2