2003 Jul 14 6
Philips Semiconductors Product specification
Quad 2-input NOR gate 74ALVC02
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at T
amb
=25°C.
SYMBOL PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX. UNIT
OTHER V
CC
(V)
T
amb
= −40 to +85 °C
V
IH
HIGH-level input
voltage
1.65 to 1.95 0.65 × V
CC
−− V
2.3 to 2.7 1.7 −− V
2.7 to 3.6 2 −− V
V
IL
LOW-level input
voltage
1.65 to 1.95 −−0.35 × V
CC
V
2.3 to 2.7 −−0.7 V
2.7 to 3.6 −−0.8 V
V
OL
LOW-level output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 µA 1.65 to 3.6 −−0.2 V
I
O
= 6 mA 1.65 − 0.11 0.3 V
I
O
=12mA 2.3 − 0.17 0.4 V
I
O
=18mA 2.3 − 0.25 0.6 V
I
O
=12mA 2.7 − 0.16 0.4 V
I
O
=18mA 3.0 − 0.23 0.4 V
I
O
=24mA 3.0 − 0.30 0.55 V
V
OH
HIGH-level output
voltage
V
I
=V
IH
or V
IL
I
O
= −100 µA 1.65 to 3.6 V
CC
− 0.2 −− V
I
O
=−6 mA 1.65 1.25 1.51 − V
I
O
= −12 mA 2.3 1.8 2.10 − V
I
O
= −18 mA 2.3 1.7 2.01 − V
I
O
= −12 mA 2.7 2.2 2.53 − V
I
O
= −18 mA 3.0 2.4 2.76 − V
I
O
= −24 mA 3.0 2.2 2.68 − V
I
LI
input leakage
current
V
I
= 3.6 V or GND 3.6 −±0.1 ±5 µA
I
off
power OFF leakage
current
V
I
or V
O
= 3.6 V 0.0 −±0.1 ±10 µA
I
CC
quiescent supply
current
V
I
=V
CC
or GND; I
O
= 0 3.6 − 0.2 20 µA
∆I
CC
additional quiescent
supply current per
input pin
V
I
=V
CC
− 0.6 V; I
O
= 0 3.0 to 3.6 − 5 750 µA
