NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
120 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C) Per device
Per diode
I
F(AV)
20
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 135°C) Per device
Per diode
I
FRM
40
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
120 A
Operating Junction Temperature T
J
−40 to +150 °C
Storage Temperature T
stg
−40 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol
NTST20120CTG
NTSB20120CT−1G
NTSB20120CTG NTSJ20120CTG Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
2.5
70
1.43
46.8
4.42
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
v
F
0.62
0.90
0.54
0.64
−
1.10
−
0.72
V
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
12
6
−
17
−
−
700
100
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
