Vishay Siliconix
Si7461DP
Document Number: 72567
S10-2244-Rev. G, 04-Oct-10
www.vishay.com
1
P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
- 60
0.0145 at V
GS
= - 10 V
- 14.4
0.019 at V
GS
= - 4.5 V
- 12.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7461DP-T1-E3 (Lead (Pb)-free)
Si7461DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 14.4
- 8.6
A
T
A
= 70 °C
- 11.5
- 6.9
Pulsed Drain Current
I
DM
- 60
Continuous Source Current (Diode Conduction)
a
I
S
- 4.5
- 1.6
Avalanche Current
L = 1.0 mH
I
AS
50
Single Pulse Avalanche Energy
E
AS
125
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
5.4
1.9
W
T
A
= 70 °C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
18 23
°C/W
Steady State 52 65
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.0 1.3