BD241C-S Datasheet BD241A-S, BD241C-S | P1-P3

BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Designed for Complementary Use with the

BD242 Series

40 W at 25°C Case Temperature

3 A Continuous Collector Current

5 A Peak Collector Current

Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

p

≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 0.4 A, R

BE

= 100 Ω,

V

BE(off)

= 0, R

S

= 0.1 Ω, V

CC

= 20 V.

TINUEULAVLOBMYSGNITAR

Collector-emitter volt

age (R

BE

= 100 Ω)

BD241

BD241A

BD241B

BD241C

V

CER

55

70

90

115

V

Collector-emitter voltage (I

C

= 30 mA)

BD241

BD241A

BD241B

BD241C

V

CEO

45

60

80

100

V

Emitter-base voltage V

EBO

5 V

Continuous collector current I

C

3 A

I)1 etoN ees( tnerruc rotcelloc kaeP

CM

5 A

Continuous base current I

B

1 A

Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac

tot

40 W

P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC

tot

2 W

IL½)4 etoN ees( ygrene daol evitcudni depmalcnU

C

2

32 mJ

Tegnar erutarepmet noitcnuj gnitarepO

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL

L

250 °C

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

This series isOBSOLETEAND

not recommended for new designs.

OBSOLETE

BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

2

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= 30 mA

(see Note 5)

I

B

= 0

BD241

BD241A

BD241B

BD241C

45

60

80

100

V

I

CES

Collector-emitter

cut-off current

V

CE

= 55 V

V

CE

= 70 V

V

CE

= 90 V

V

CE

=115 V

V

BE

=0

V

BE

=0

V

BE

=0

V

BE

=0

BD241

BD241A

BD241B

BD241C

0.2

mA

I

CEO

Collector cut-off

current

V

CE

= 30 V

V

CE

= 60 V

I

B

=0

I

B

=0

BD241/241A

BD241B/241C

0.3

mA

I

EBO

Emitter cut-off

current

V

EB

= 5 V I

C

=0 1 mA

h

FE

Forward current

transfer ratio

V

CE

= 4 V

V

CE

= 4 V

I

C

= 1A

I

C

= 3A

(see Notes 5 and 6)

25

10

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 0.6 A I

C

= 3 A (see Notes 5 and 6) 1.2 V

V

BE

Base-emitter

voltage

V

CE

= 4 V I

C

= 3 A (see Notes 5 and 6) 1.8 V

h

fe

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 kHz 20

|

h

fe

|

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 MHz 3

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 3.125 °C/W

R

θJA

Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Tu r n -o n tim e I

C

= 1 A

V

BE(off)

= -3.7 V

I

B(on)

= 0.1 A

R

L

= 20 Ω

I

B(off)

= -0.1 A

t

p

= 20 µs, dc ≤ 2%

0.3 µs

t

off

Turn-off time 1µs

OBSOLETE

BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

3

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·01 0·1 1·0 10

h

FE

- DC Current Gain

10

100

1000

TCS631AH

V

CE

= 4 V

t

p

= 300 µs, duty cycle < 2%

T

C

= 25°C

T

C

= 80°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B

- Base Current - mA

0·1 1·0 10 100 1000

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

0·01

0·1

1·0

10

TCS631AB

I

C

= 100 mA

I

C

= 300 mA

I

C

= 1 A

I

C

= 3 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·01 0·1 1·0 10

V

BE

- Base-Emitter Voltage - V

0·5

0·6

0·7

0·8

0·9

1·0

TCS631AC

V

CE

= 4 V

T

C

= 25°C

OBSOLETE

BD241C-S

BD241C-S

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