2KBPxxM-E4, 3N25x-E4
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Vishay General Semiconductor
Revision: 05-Aug-15
1
Document Number: 88532
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Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package KBPM
I
F(AV)
2.0 A
V
RRM
50 V to 1000 V
I
FSM
60 A
I
R
5 μA
V
F
at I
F
= 3.14 A 1.1 V
T
J
max. 165 °C
Diode variations In-line
+~~−
Case Style KBPM
+
~
~
−
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum repetitive peak reverse
voltage
V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at T
A
= 55 °C
I
F(AV)
2.0 A
Peak forward surge current single half
sine-wave superimposed on rated
load
I
FSM
60 A
Rating for fusing (t < 8.3 ms) I
2
t15A
2
s
Operating junction and storage
temperature range
T
J
, T
STG
-55 to +165 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST
CONDITIONS
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
UNIT
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum instantaneous
forward voltage drop per
diode
V
F
3.14 A 1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
I
R
T
A
= 25 °C 5.0
μA
T
A
= 125 °C 500
Typical junction
capacitance per diode
T
J
4.0 V,
1 MHz
25 pF
