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MC74VHCU04DR2

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 7
1 Publication Order Number:
MC74VHCU04/D
MC74VHCU04
Hex Inverter
(Unbuffered)
The MC74VHCU04 is an advanced high speed CMOS unbuffered
inverter fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
The inputs tolerate voltages up to 7.0 V, allowing the interface of
5.0 V systems to 3.0 V systems.
Features
• High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
• High Noise Immunity: V
NIH
= V
NIL
= 10% V
CC
(Min.)
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Designed for 2.0 V to 5.5 V Operating Range
• Low Noise: V
OLP
= 0.8 V (Max)
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300 mA
• ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
• Chip Complexity: 12 FETs or 3 Equivalent Gates
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Logic Diagram
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
MARKING
DIAGRAMS
TSSOP−14
DT SUFFIX
CASE 948G
1
SOIC−14
D SUFFIX
CASE 751A
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
A = Assembly Location
WL, L = Wafer Lot
Y, YY = Year
WW, W = Work Week
G or G = Pb−Free Package
VHCU04G
AWLYWW
1
14
VHCU
04
ALYWG
G
1
14
(Note: Microdot may be in either location)
L
H
FUNCTION TABLE
Inputs Outputs
A
H
L
Y
MC74VHCU04
http://onsemi.com
2
Figure 2. Pinout: 14−Lead Packages
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
(Top View)
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage –0.5 to + 7.0 V
V
in
DC Input Voltage –0.5 to + 7.0 V
V
out
DC Output Voltage –0.5 to V
CC
+ 0.5 V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
in
DC Input Voltage 0 5.5 V
V
out
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature −40 + 85
_C
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MC74VHCU04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
V
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
V
IH
Minimum High−Level
Input Voltage
2.0
3.0 to 5.5
1.70
V
CC
x 0.8
1.70
V
CC
x 0.8
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0 to 5.5
0.30
V
CC
x 0.2
0.30
V
CC
x 0.2
V
V
OH
Minimum High−Level
Output Voltage
V
in
=V
IL
I
OH
= −50mA
2.0
3.0
4.5
1.8
2.7
4.0
2.0
3.0
4.5
1.8
2.7
4.0
V
V
in
= GND
I
OH
= −4mA
I
OH
= −8mA
3.0
4.5
2.58
3.94
2.48
3.80
V
OL
Maximum Low−Level
Output Voltage
V
in
= V
IH
I
OL
= 50mA
2.0
3.0
4.5
0.0
0.0
0.0
0.2
0.3
0.5
0.2
0.3
0.5
V
V
in
= V
CC
I
OL
= 4mA
I
OL
= 8mA
3.0
4.5
0.36
0.36
0.44
0.44
I
in
Maximum Input
Leakage Current
V
in
= 5.5 or GND 0 to 5.5 ± 0.1 ± 1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
in
= V
CC
or GND 5.5 2.0 20.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0ns)
Symbol
Parameter Test Conditions
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Maximum Propagation Delay
,
A or B to Y
V
CC
= 3.3 ± 0.3V C
L
= 15pF
C
L
= 50pF
5.0
7.5
8.9
11.4
1.0
1.0
10.5
13.0
ns
V
CC
= 5.0 ± 0.5V C
L
= 15pF
C
L
= 50pF
3.5
5.0
5.5
7.0
1.0
1.0
6.5
8.0
C
in
Maximum Input Capacitance 5 10 10 pF
C
PD
Power Dissipation Capacitance (Per Inverter) (Note 1)
Typical @ 25°C, V
CC
= 5.0V
pF
9
1. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/6 (per buffer). C
PD
is used to determine the
no−load dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 5.0V)
Symbol
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.5 0.8 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−0.5 −0.8 V
V
IHD
Minimum High Level Dynamic Input Voltage 4.0 V
V
ILD
Maximum Low Level Dynamic Input Voltage 1.0 V
P1-P3P4-P6

MC74VHCU04DR2

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Buy MC74VHCU04DR2
Manufacturer:
ON Semiconductor
Description:
Inverters 2-5.5V CMOS Hex
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