MT36HTF51272FDZ-80EH1N8 Datasheet MT36HTF51272FDZ-667H1N8, MT36HTF51272FDZ-80EH1N8, MT36HTF51272FDZ-667H1D6 | P1-P3

DDR2 SDRAM FBDIMM

MT36HTF51272FDZ – 4GB

Features

•

240-pin, DDR2 fully buffered DIMM (FBDIMM)

•

Fast data transfer rates: PC2-4200, PC2-5300, or

PC2-6400

•

4GB (512 Meg x 72)

•

3.2 Gb/s, 4 Gb/s, and 4.8 Gb/s link transfer rates

•

High-speed, 1.5V differential, point-to-point link be-

tween host memory controller and the advanced

memory buffer (AMB)

•

Fault-tolerant; can work around a bad bit lane in

each direction

•

High-density scaling with up to eight FBDIMM devi-

ces per channel

•

SMBus interface to AMB for configuration register

access

•

In-band and out-of-band command access

•

Deterministic protocol

–

Enables memory controller to optimize DRAM

accesses for maximum performance

–

Delivers precise control and repeatable memo-

ry behavior

•

Automatic DDR2 SDRAM bus and channel calibra-

tion

•

Transmitter de-emphasis to reduce ISI

Figure 1: 240-Pin FBDIMM (MO-256)

Module height: 30.35mm (1.19in)

Options Marking

•

Package

–

240-pin DIMM (halogen-free) Z

•

Frequency/CAS latency

–

2.5ns @ CL = 5 (DDR2-800) -80E

–

3.0ns @ CL = 5 (DDR2-667) -667

Features (Continued)

•

MBIST and IBIST test functions

•

Transparent mode for DRAM test support

•

= V

DDQ

= 1.8V for DRAM

•

REF

= 0.9V SDRAM command and address termina-

tion

•

= 1.5V for AMB

•

DDSPD

= 3–3.6V for AMB and EEPROM

•

Serial presence-detect (SPD) with EEPROM

•

Gold edge contacts

•

Quad rank

•

Supports 95°C operation with 2X refresh

Table 1: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s) t

RCD

(ns)

(ns)CL = 6 CL = 5 CL = 4 CL = 3

-80E PC2-6400 800 800 533 400 12.5 12.5 55

-667 PC2-5300

–

667 553 400 15 15 55

-53E PC2-4200

– –

553 400 15 15 55

4GB (x72, QR) 240-Pin DDR2 SDRAM FBDIMM

Features

PDF: 09005aef8409299f

htf36c512x72fdz.pdf - Rev. A 06/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 2: Addressing

Parameter 4GB

Refresh count 8K

Device bank address 8 BA[2:0]

Device configuration 1Gb (128 Meg x 8)

Row address 16K A[13:0]

Column address 1K A[9:0]

Module rank address 4 S#[3:0]

Table 3: Part Numbers and Timing Parameters – 4GB

Base device: MT47H128M8,

1Gb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Clock Cycles

(CL-

RCD-

RP)

Link Transfer

Rate

MT36HTF51272FDZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s

MT36HTF51272FDZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s

Notes:

1. The data sheet for the base device can be found on Micron’s Web site.

2. All part numbers end with a four-place code (not shown) that designates component, PCB, and AMB revi-

sions. Consult factory for current revision codes. Example: MT36HTF51272FDZ-80EH1N8.

4GB (x72, QR) 240-Pin DDR2 SDRAM FBDIMM

Features

PDF: 09005aef8409299f

htf36c512x72fdz.pdf - Rev. A 06/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Pin Assignments and Descriptions

Table 4: Pin Assignments

240-Pin FBDIMM Front 240-Pin FBDIMM Back

Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1 V

31 PN3 61 PN9# 91 PS9#

121 V

151 SN3 181 SN9# 211 SS9#

2 V

32 PN3# 62 V

92 V

122 V

152 SN3# 182 V

212 V

3 V

33 V

63 PN10 93 PS5 123 V

153 V

183 SN10 213 SS5

4 V

34 PN4 64 PN10# 94 PS5# 124 V

154 SN4 184 SN10# 214 SS5#

5 V

35 PN4# 65 V

95 V

125 V

155 SN4# 185 V

215 V

6 V

36 V

66 PN11 96 PS6 126 V

156 V

186 SN11 216 SS6

7 V

37 PN5 67 PN11# 97 PS6# 127 V

157 SN5 187 SN11# 217 SS6#

8 V

38 PN5# 68 V

98 V

128 V

158 SN5# 188 V

218 V

9 V

39 V

69 V

99 PS7 129 V

159 V

189 V

219 SS7

10 V

40 PN13

70 PS0 100 PS7# 130 V

160 SN13

190 SS0 220 SS7#

11 V

41 PN13#

71 PS0# 101 V

131 V

161 SN13#

191 SS0# 221 V

12 V

42 V

72 V

102 PS8 132 V

162 V

192 V

222 SS8

13 V

43 V

73 PS1 103 PS8# 133 V

163 V

193 SS1 223 SS8#

14 V

44 NC 74 PS1# 104 V

134 V

164 NC 194 SS1# 224 V

15 V

45 NC 75 V

105 NC 135 V

165 NC 195 V

225 NC

16 NC 46 V

76 PS2 106 NC 136 NC 166 V

196 SS2 226 NC

17 RESET# 47 V

77 PS2# 107 V

137 M_TEST

(DNU)

167 V

197 SS2# 227 V

18 V

48 PN12

78 V

108 V

138 V

168 SN12

198 V

228 SCK

19 NC 49 PN12#

79 PS3 109 V

139 NC 169 SN12#

199 SS3 229 SCK#

20 NC 50 V

80 PS3# 110 V

140 NC 170 V

200 SS3# 230 V

21 V

51 PN6 81 V

111 V

141 V

171 SN6 201 V

231 V

22 PN0 52 PN6# 82 PS4 112 V

142 SN0 172 SN6# 202 SS4 232 V

23 PN0# 53 V

83 PS4# 113 V

143 SN0# 173 V

203 SS4# 233 V

24 V

54 PN7 84 V

114 V

144 V

174 SN7 204 V

234 V

25 PN1 55 PN7# 85 V

115 V

145 SN1 175 SN7# 205 V

235 V

26 PN1# 56 V

86 NC 116 V

146 SN1# 176 V

206 NC 236 V

27 V

57 PN8 87 NC 117 V

147 V

177 SN8 207 NC 237 V

28 PN2 58 PN8# 88 V

118 SA2 148 SN2 178 SN8# 208 V

238 V

DDSPD

29 PN2# 59 V

89 V

119 SDA 149 SN2# 179 V

209 V

239 SA0

30 V

60 PN9 90 PS9

120 SCL 150 V

180 SN9 210 SS9

240 SA1

Note:

1. The following signals are cyclical redundancy code (CRC) bits and thus appear out of the

normal sequence: PN12/PN12#, SN12/SN12#, PN13/PN13#, SN13/SN13#, PS9/PS9#, and SS9/

SS9#.

4GB (x72, QR) 240-Pin DDR2 SDRAM FBDIMM

Pin Assignments and Descriptions

PDF: 09005aef8409299f

htf36c512x72fdz.pdf - Rev. A 06/10 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

P1-P3 P4-P6 P7-P9 P10-P11

MT36HTF51272FDZ-80EH1N8

Mfr. #:

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Manufacturer:

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Description:

MODULE DDR2 SDRAM 4GB 240FBDIMM

Lifecycle:

New from this manufacturer.

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