OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTQD6866R2G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
NTQD6866R2/D
NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N−Channel TSSOP−8
Features
• New Low Profile TSSOP−8 Package
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• I
DSS
and V
DS(on)
Specified at Elevated Temperatures
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Phones
• Battery Applications
• NoteBook PC
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW) V
DGR
20 Vdc
Gate−to−Source Voltage − Continuous V
GS
"12 Vdc
Thermal Resistance − Single Die
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
DM
62.5
2.0
6.9
24
°C/W
W
Adc
Adc
Thermal Resistance − Single Die
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
I
DM
88
1.42
5.8
4.6
20
°C/W
W
Adc
Adc
Adc
Thermal Resistance − Single Die
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
I
DM
132
0.94
4.7
3.8
14
°C/W
W
Adc
Adc
Adc
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 20 Vdc, V
GS
= 5.0 Vdc,
Peak I
L
= 5.5 Apk, L = 10 mH, R
G
= 25 W)
E
AS
150
mJ
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2″ square FR−4 board
(1 in sq, 2 oz Cu 0.06″ thick single−sided), t < 10 seconds.
2. Mounted onto a 2″ square FR−4 board
(1 in sq, 2 oz Cu 0.06″ thick single−sided), t = ss.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
Device Package Shipping
†
ORDERING INFORMATION
TSSOP−8
CASE 948S
PLASTIC
1
MARKING DIAGRAM &
PIN ASSIGNMENT
N−Channel
D
S1
G1
8
NTQD6866R2 TSSOP−8 4000/Tape & Reel
N−Channel
D
S2
G2
6.9 AMPERES
20 VOLTS
30 mW @ V
GS
= 4.5 V
http://onsemi.com
866 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTQD6866R2G TSSOP−8
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
S1
866
YWW
A G
G1 S2 G2
DDDD
1
NTQD6866R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
−
−
18.5
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 20 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 20 Vdc, T
J
= 100°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current
(V
GS
= ±12 Vdc, V
DS
= 0 Vdc)
I
GSS
− − ±100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
0.6
−
0.9
−2.7
1.2
−
Vdc
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= 4.5 Vdc, I
D
= 6.9 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.8 Adc)
(V
GS
= 2.5 Vdc, I
D
= 3.5 Adc)
(V
GS
= 2.5 Vdc, I
D
= 2.9 Adc)
R
DS(on)
−
−
−
−
0.026
0.025
0.030
0.030
0.032
0.030
0.038
0.038
W
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 5.8 Adc)
g
FS
− 14 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 875 1400 pF
Output Capacitance C
oss
− 325 550
Reverse Transfer Capacitance C
rss
− 100 175
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
DD
= 16 Vdc, I
D
= 5.8 Adc,
V
GS
= 4.5 Vdc, R
G
= 6.0 W)
t
d(on)
− 10 18 ns
Rise Time t
r
− 45 80
Turn−Off Delay Time t
d(off)
− 40 75
Fall Time t
f
− 90 150
Turn−On Delay Time
(V
DD
= 16 Vdc, I
D
= 5.8 Adc,
V
GS
= 4.5 Vdc, R
G
= 3.0 W)
t
d(on)
− 8.0 −
Rise Time t
r
− 45 −
Turn−Off Delay Time t
d(off)
− 35 −
Fall Time t
f
− 75 −
Gate Charge
(V
DS
= 16 Vdc, V
GS
= 4.5 Vdc,
I
D
= 5.8 Adc)
Q
tot
− 13 22 nC
Q
gs
− 1.8 −
Q
gd
− 4.5 −
BODY−DRAIN DIODE RATINGS
Forward On−Voltage (I
S
= 5.8 Adc, V
GS
= 0 Vdc)
(I
S
= 5.8 Adc, V
GS
= 0 Vdc, T
J
= 100°C)
V
SD
−
−
0.85
0.75
1.0
−
Vdc
Reverse Recovery Time
(I
S
= 5.8 Adc, V
GS
= 0 Vdc,
V
DS
= 20 Vdc
dI
S
/dt = 100 A/ms)
t
rr
− 23 − ns
t
b
− 11 −
t
a
− 12 −
Reverse Recovery Stored Charge Q
RR
− 0.013 − mC
5. Switching characteristics are independent of operating junction temperature.
NTQD6866R2
http://onsemi.com
3
14
12
10
18
8
6
4
2
0
16
0.04
0.03
0.02
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
2
1.5
1
0.5
100
10
1000
10000
0
12
0.6
10
0.40.2
8
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0
0.045
0.04
0.03
2
0.02
0.015
0.01
48
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
16
−50 50250−25 75 125100
0.5 2.51
01281620
6
4
2
0
2
60864101612
150
14
0.8 1 1.5 2
3 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
I
D
= 5.8 A
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 2.9 A
V
GS
= 4.5 V
V
GS
= 10 V
2.2 V
2 V
1.6 V
1.4 V
1.2 V
1.8 V
14
V
GS
= 4.5 V
5 V
1.2 1.4 1.6 1.8
T
J
= 25°C
0.025
0.035
T
J
= 25°C
P1-P3P4-P6P7-P7

NTQD6866R2G

Mfr. #:
Buy NTQD6866R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 5.8A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet