Technical Note
7/10
BA6950FS, BA6951FS
www.rohm.com
2011.05 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
External application components setting procedure
The relation between VCTL and the output high voltage is as follows.
· I
RT1
= VCTL / R1 ····· (1) VCTL: Torque control voltage
· I
RT2
= I
ACT
x R5 / R4 ····· (2) I
ACT
: Motor current
· V
RT1
= R3 x ( I
RT1
+ I
RT2
) + R2 x I
RT1
····· (3)
· V
MX
= 4 x V
RT1
····· (4) V
M1
, V
M2
: Output high voltage
V
MX
=
4 ( R2 + R3 )
x VTCL +
4 R3 R5
x I
ACT
····· (5)
R1 R4
To drive the motor by constant speed as follows.
R
L
+ R
ON
+ R5 =
4 R3 R5
····· (6)
R
L
: Motor coil impedance
R4 R
ON
: On resistance of the driver IC
R3, R4, and R5 are first set, and then R1 and R2 are set afterwards.
Table 4 External components
Parts Default value Parameter Recommended condition
R1 22k I
RT1
I
RT1
< 1mA
R2 + R3 1k + 1.5k V
RT1
V
RT1
x 4 < VB
R4 560 I
RT2
I
RT2
< 1mA
R5 5.5 V
ATC
V
ATC
< 1V
C1 33pF V
PCT
Please confirm the motor
operation
C2 0.1µF V
PC
C3, C4 0.1µF V
M1
, V
M2
C5, C6 1~100µF VCC, VB
Interfaces
Fig. 17 FIN, RIN Fig.18 VCTL, RC, PCT Fig.19 PC
Fig. 20 RT1, RT2 Fig.21 CS1, CS2 Fig.22 CS, TL Fig.23 VB, ACT, M1,M2
(BA6950FS) (BA6951FS)
FIN
RIN
24k
3.6k
10k
13.5k
10k
10k
VCTL
PCT
RC
1k
1k
20k
PC
1k
M2 M1
VB
ACT
RT1
1k
RT2
CS1
CS2
1k
1k
1k
CS
1k
TL
Technical Note
8/10
BA6950FS, BA6951FS
www.rohm.com
2011.05 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
Notes for use
1) Absolute maximum ratings
Devices may be destroyed when supply voltage or operating temperature exceeds the absolute maximum rating.
Because the cause of this damage cannot be identified as, for example, a short circuit or an open circuit, it is important
to consider circuit protection measures – such as adding fuses – if any value in excess of absolute maximum ratings is
to be implemented.
2) Connecting the power supply connector backward
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply lines, such as adding an external direction diode.
3) Power supply lines
Return current generated by the motor’s Back-EMF requires countermeasures, such as providing a return current path
by inserting capacitors across the power supply and GND (10µF, ceramic capacitor is recommended). In this case, it is
important to conclusively confirm that none of the negative effects sometimes seen with electrolytic capacitors –
including a capacitance drop at low temperatures - occurs. Also, the connected power supply must have sufficient
current absorbing capability. Otherwise, the regenerated current will increase voltage on the power supply line, which
may in turn cause problems with the product, including peripheral circuits exceeding the absolute maximum rating. To
help protect against damage or degradation, physical safety measures should be taken, such as providing a voltage
clamping diode across the power supply and GND.
4) Electrical potential at GND
Keep the GND terminal potential to the minimum potential under any operating condition. In addition, check to
determine whether there is any terminal that provides voltage below GND, including the voltage during transient
phenomena. When both a small signal GND and high current GND are present, single-point grounding (at the set’s
reference point) is recommended, in order to separate the small signal and high current GND, and to ensure that
voltage changes due to the wiring resistance and high current do not affect the voltage at the small signal GND. In the
same way, care must be taken to avoid changes in the GND wire pattern in any external connected component.
5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) under actual operating
conditions.
6) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error, or if pins are shorted together.
7) Operation in strong electromagnetic fields
Using this product in strong electromagnetic fields may cause IC malfunctions. Use extreme caution with
electromagnetic fields.
8) ASO - Area of Safety Operation
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
9) Built-in thermal shutdown (TSD) circuit
The TSD circuit is designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or
guarantee its operation in the presence of extreme heat. Do not continue to use the IC after the TSD circuit is activated,
and do not operate the IC in an environment where activation of the circuit is assumed.
10) Capacitor between output and GND
In the event a large capacitor is connected between the output and GND, if VCC and VIN are short-circuited with 0V or
GND for any reason, the current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor
smaller than 0.47μF between output and GND.
11) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress.
Therefore, always discharge capacitors after each process or step. Always turn the IC's power supply off before
connecting it to or removing it from the test setup during the inspection process. Ground the IC during assembly steps
as an antistatic measure. Use similar precaution when transporting or storing the IC.
12) Switching of rotating direction (FWD/REV)
When the rotating direction is changed over by the motor rotating condition, switch the direction after the motor is
temporarily brought to the BRAKE condition or OPEN condition. It is recommended to keep the relevant conditions as
follows: via BRAKE: Longer than braking time*.
(* the time required for the output voltage to achieve potential below GND when brake is activated.)
via OPEN: The time longer than 1 ms is recommended.
Technical Note
9/10
BA6950FS, BA6951FS
www.rohm.com
2011.05 - Rev.C
© 2011 ROHM Co., Ltd. All rights reserved.
13) Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by
which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.
Parasitic
element
Appendix: Example of monolithic IC structure
Resistor
Transistor (NPN)
N
N N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Pin B
Other adjacent elements
E
B C
GND
Parasitic
element

BA6951FS-E2

Mfr. #:
Manufacturer:
Description:
Motor / Motion / Ignition Controllers & Drivers REVRS MOTOR DRIVER 16PIN
Lifecycle:
New from this manufacturer.
Delivery:
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