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SI7868ADP-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
Si7868ADP
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free available
• TrenchFET
®
Power MOSFET
• Low R
DS(on)
•PWM (Q
gd
and R
g
) Optimized
• 100 % R
g
Tested
APPLICATIONS
• Low Output Voltage Synchronous Rectifier
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
20
0.00225 at V
GS
= 10 V
40
46 nC
0.00275 at V
GS
= 4.5 V
40
Ordering Information: Si7868ADP-T1-E3 (Lead (Pb)-free)
Si7868ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
40
A
T
C
= 70 °C
32
T
A
= 25 °C
35
b, c
T
A
= 70 °C
28
b, c
Pulsed Drain Current
I
DM
70
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
40
T
A
= 25 °C
4.9
b, c
Single-Pulse Avalanche Current
L = 0.1 mH
I
AS
30
Single-Pulse Avalanche Energy
E
AS
45
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
83
W
T
C
= 70 °C
53
T
A
= 25 °C
5.4
b, c
T
A
= 70 °C
3.4
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
18 23
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.0 1.5
RoHS
C
OMPLIAN
T
www.vishay.com
2
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
Vishay Siliconix
Si7868ADP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 5 mA
23
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
4
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.6 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 16 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0018 0.00225
Ω
V
GS
= 4.5 V, I
D
= 20 A
0.0021 0.00275
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
150 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
6110
pFOutput Capacitance
C
oss
1225
Reverse Transfer Capacitance
C
rss
550
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 15 A
98 150
nC
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 15 A
46 70
Gate-Source Charge
Q
gs
9.5
Gate-Drain Charge
Q
gd
8.8
Gate Resistance
R
g
f = 1 MHz 0.5 1.1 1.7 Ω
Tur n - On D elay T ime
t
d(on)
V
DD
= 10 V, R
L
= 1 Ω
I
D
≅ 10 A, V
GEN
= 4.5 V, R
g
= 1 Ω
28 45
ns
Rise Time
t
r
120 180
Turn-Off Delay Time
t
d(off)
52 80
Fall Time
t
f
12 20
Tur n - On D elay T ime
t
d(on)
V
DD
= 10 V, R
L
= 1 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
16 25
Rise Time
t
r
97 150
Turn-Off Delay Time
t
d(off)
58 90
Fall Time
t
f
815
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
40
A
Pulse Diode Forward Current
a
I
SM
70
Body Diode Voltage
V
SD
I
S
= 5 A
0.65 1.1 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
50 75 ns
Body Diode Reverse Recovery Charge
Q
rr
43 60 nC
Reverse Recovery Fall Time
t
a
24
ns
Reverse Recovery Rise Time
t
b
26
Document Number: 73384
S-80438-Rev. B, 03-Mar-08
www.vishay.com
3
Vishay Siliconix
Si7868ADP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
10
20
30
40
50
60
70
0.0 0.2 0.4 0.6 0.8 1.0
V
GS
= 10 thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.0016
0.0018
0.0020
0.0022
0.0024
0.0026
0 102030405060
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
0 20406080100
I
D
= 15 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
V
DS
= 5 V
V
DS
= 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
0
1500
3000
4500
6000
7500
048121620
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 4.5 V
I
D
= 20 A
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7868ADP-T1-E3

Mfr. #:
Buy SI7868ADP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 40A 83W
Lifecycle:
New from this manufacturer.
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