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BC517RL1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
BC517/D
BC517
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
30 Vdc
Collector−Base Voltage V
CB
40 Vdc
Collector−Emitter Voltage V
EB
10 Vdc
Collector Current − Continuous I
C
1.0 Adc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
12
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
BC517 TO−92 5000 Units / Bulk
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
TO−92
CASE 29
STYLE 17
1
2
3
BC517G TO−92
(Pb−Free)
5000 Units / Bulk
(Note: Microdot may be in either location)
http://onsemi.com
BC
517
AYWW G
G
BC517RL1 TO−92 2000 / Tape & Ree
l
BC517ZL1 TO−92 2000 / Ammo Pack
BC517RL1G TO−92
(Pb−Free)
2000 / Tape & Ree
l
BC517ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
COLLECTOR 1
BASE
2
EMITTER 3
BC517
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
BE
= 0)
V
(BR)CES
30 − −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
40 − −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
10 − −
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc)
I
CES
− − 500
nAdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
− − 100
nAdc
Emitter Cutoff Current
(V
CB
= 10 Vdc, I
C
= 0)
I
EBO
− − 100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 20 mAdc, V
CE
= 2.0 Vdc)
h
FE
30,000 − −
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
V
CE(sat)
− − 1.0
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
− − 1.4
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
− 200 −
MHz
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. f
T
= |h
fe
| • f
test
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
BC517
http://onsemi.com
3
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
≈ 0
I
C
= 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100 mA
10 mA
e
n
, NOISE VOLTAGE (nV)
i
n
, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
I
C
= 1.0 mA
V
T
, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
P1-P3P4-P6

BC517RL1

Mfr. #:
Buy BC517RL1
Manufacturer:
ON Semiconductor
Description:
TRANS NPN DARL 30V 1A TO-92
Lifecycle:
New from this manufacturer.
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