IPB80N06S2L11ATMA1

IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
13 Typical avalanche energy 14 Typ. gate charge
E
AS
= f(T
j
) V
GS
= f(Q
gate
); I
D
= 80 A pulsed
parameter: I
D
= 80A
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
= f(T
j
); I
D
= 1 mA
0
50
100
150
200
250
300
25 75 125 175
T
j
[°C]
E
AS
[mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
11 V
44 V
0
2
4
6
8
10
12
0 20 40 60
Q
gate
[nC]
V
GS
[V]
46
48
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
Rev. 1.1 page 7 2010-10-26
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
Infineon Technologies AG
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D-81541 München
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1 page 8 2010-10-26

IPB80N06S2L11ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
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