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IPB80N06S2L11ATMA2
P1-P3
P4-P6
P7-P8
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2
L-11
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥ 4 V
I
D
= f(
T
C
);
V
GS
≥ 10 V
3 Safe operating area
4 Max. transient th
ermal impedance
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
Z
thJC
= f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
singl
e pulse
0.01
0.05
0.1
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
20
40
60
80
100
120
140
160
180
0
5
0
100
150
200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
0
5
0
100
150
200
T
C
[°C]
I
D
[A]
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
Rev. 1.1
page 4
2010-10-26
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2
L-11
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
= f(
V
DS
);
T
j
= 25 °C
R
DS(on)
= (
I
D
);
T
j
= 25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. Forward transcond
uctance
I
D
= f(
V
GS
);
V
DS
= 6V
g
fs
= f(
I
D
);
T
j
= 25°C
parameter:
T
j
parameter:
g
fs
2.5 V
3 V
3.5 V
4 V
10 V
0
50
100
150
200
250
300
0
2
4
6
8
10
V
DS
[V]
I
D
[A]
-55 °C
25 °C
175 °C
0
20
40
60
80
100
120
140
160
1
2
3
4
V
GS
[V]
I
D
[A]
0
50
100
150
0
5
0
100
150
200
I
D
[A]
g
fs
[S]
4 V
4.5 V
10 V
7
9
11
13
15
0
20
40
60
80
100
120
I
D
[A]
R
DS(on)
[m
W
]
Rev. 1.1
page 5
2010-10-26
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2
L-11
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold volt
age
R
DS(ON)
= f(
T
j
)
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
= 40 A; V
GS
= 10 V
parameter:
I
D
11 Typ. capacitances
12 Typical forward diode characteristicis
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
IF = f(V
SD
)
parameter:
T
j
25 °C
175 °C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.
2
1.4
V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
4
10
3
10
2
0
5
10
15
20
25
30
V
DS
[V]
C
[pF]
93 µA
465 µA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
10
0
140
180
T
j
[°C]
V
GS(th)
[V]
0
2
4
6
8
10
12
14
16
18
20
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
W
]
Rev. 1.1
page 6
2010-10-26
P1-P3
P4-P6
P7-P8
IPB80N06S2L11ATMA2
Mfr. #:
Buy IPB80N06S2L11ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
Delivery:
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