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PHD13005,127

P1-P3P4-P6P7-P9P10-P12P13-P15
PHD13005 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 3 of 14
NXP Semiconductors
PHD13005
NPN power transistor with integrated diode
Fig 1. Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area
Fig 3. Normalized total power dissipation as a function of heatsink temperature
V
CL(CE)
(V)
0 800600200 400
003aad544
4
2
6
8
I
C
(A)
0
V
BE
= −5V
001aab999
DUT
L
C
L
B
I
Bon
V
BB
V
CC
V
CL(CE)
probe point
03aa13
0
40
80
120
0 50 100 150 200
T
h
(°C)
P
der
(%)
PHD13005 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 4 of 14
NXP Semiconductors
PHD13005
NPN power transistor with integrated diode
T
h
25 °C
Mounted with heatsink compound and (30 ± 5) N force on the centre of the envelope
(1) P
tot
maximum and P
tot
peak maximum lines
(2) Second breakdown limits
(3) Region of permissible DC operation
(4) Extension of operating region for repetitive pulse operation
(5) Extension of operating region during turn-on in single transistor converters provided that
R
BE
100 and t
p
0.6 s
Fig 4. Forward bias safe operating area
001aai071
10
−1
10
−2
10
1
10
2
I
C
(A)
10
−3
V
CL(CE)
(V)
1 10
3
10
2
10
(1)
100 μs
200 μs
(3)
t
p
= 20 μs
duty cycle = 0.01
50 μs
500 μs
DC
(4)
(5)
(2)
I
CM(max)
I
C(max)
PHD13005 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 5 of 14
NXP Semiconductors
PHD13005
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting
base
see Figure 5 --1.67K/W
R
th(j-a)
thermal resistance from junction to ambient in free air - 60 - K/W
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aad543
t
p
(s)
10
−5
11010
−1
10
−2
10
−4
10
−3
1
10
−1
10
Z
th(j-mb)
(K/W)
10
−2
δ = 0.5
0.2
0.1
t
p
t
p
1/f
P
t
1/f
δ =
0.01
0.05
0.02
P1-P3P4-P6P7-P9P10-P12P13-P15

PHD13005,127

Mfr. #:
Buy PHD13005,127
Manufacturer:
WeEn Semiconductors
Description:
Bipolar Transistors - BJT TRANSISTOR NPN BIPO 700V
Lifecycle:
New from this manufacturer.
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