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DMP22D4UFA-7B

P1-P3P4-P6
DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP22D4UFA
NEW PRODUCT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
-20V
1.9 @ V
GS
= -4.5V
-330mA
2.4 @ V
GS
= -2.5V
-300mA
3.4 @ V
GS
= -1.8V
-250mA
5 @ V
GS
= -1.5V
-200mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low Package Profile, 0.4mm Maximum Package height
• 0.48mm
2
package footprint, 16 times smaller than SOT23
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X2-DFN0806-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP22D4UFA-7B DFN0806H4-3 10K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Bottom View
Equivalent Circuit
PW = Product Type Marking Code
DMP22D4UFA-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Package Pin Configuration
Source
Gate
Protection
Diode
Gate
Drain
D
S
G
PW
ESD PROTECTED
DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP22D4UFA
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-330
-260
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-400
-310
mA
Continuous Drain Current (Note 5) V
GS
= -1.8V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-250
-200
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-310
-240
mA
Pulsed Drain Current (Note 6)
I
DM
-800 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Steady state
P
D
400 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
310 °C/W
t<10s 220 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - 100
nA
V
DS
= -16V, V
GS
= 0V
- - 50
V
DS
= -5V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 - -1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
- 1.2 1.9
Ω
V
GS
= -4.5V, I
D
= -100mA
- 1.5 2.4
V
GS
= -2.5V, I
D
= -50mA
- 2.1 3.4
V
GS
= -1.8V, I
D
= -20mA
- 2.5 5
V
GS
= -1.5V, I
D
= -10mA
- 4.0 -
V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance
|Y
fs
|
100 450 - mS
V
DS
= -5V, I
D
= -125mA
Diode Forward Voltage
V
SD
- -0.6 -1.0 V
V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 28.7 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 4.2 - pF
Reverse Transfer Capacitance
C
rss
- 2.9 - pF
Gate Resistance
R
G
- 0.4 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
- 0.4 - nC
V
GS
= -4.5V, V
DS
=- 10V,
I
D
= -250mA
Gate-Source Charge
Q
g
s
- 0.08 - nC
Gate-Drain Charge
Q
g
d
- 0.06 - nC
Turn-On Delay Time
t
D
(
on
)
- 5.8 - ns
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2, I
D
= -200mA
Turn-On Rise Time
t
r
- 5.7 - ns
Turn-Off Delay Time
t
D
(
off
)
- 31.1 - ns
Turn-Off Fall Time
t
f
- 16.4 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
3 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP22D4UFA
NEW PRODUCT
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3
-V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
-I , DRAIN CURRENT(A)
D
V = -5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
3.5 4
-I , DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0.2 0.4 0.6 0.8
V = -1.8V
GS
V = -4.5V
GS
0
0.4
1.6
1.2
2.0
0 0.2 0.4 0.6 0.8
V = -4.5V
GS
-I DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (Normalized)
DS(ON)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE( C)
Fig. 6 On-Resistance Variation with Temperature
J
°
0
0.4
0.8
1.2
1.6
2.0
2.4
V = -2.5V,
I = -150mA
GS
D
V = -4.5V,
I = -300mA
GS
D
P1-P3P4-P6

DMP22D4UFA-7B

Mfr. #:
Buy DMP22D4UFA-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
Lifecycle:
New from this manufacturer.
Delivery:
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