H11AA23S

DESCRIPTION
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4
APPLICATIONS
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
FEATURES
• Bi-polar emitter input
• Built-in reverse polarity input protection
• Underwriters Laboratory (UL) recognized File #E90700
• VDE approved File #E94766 (ordering option ‘300’)
6
1
6
1
6
1
1
2
6
5COLL
4 EMITTER
BASE
3
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300212 12/12/01 1 OF 7 www.fairchildsemi.com
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation
P
D
All
350 mW
Derate Linearly From 25°C 4.6 mW/°C
EMITTER
I
F
All 100 mA
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps) I
F
(pk) All ±1.0 A
LED Power Dissipation
P
D
All
200 mW
Derate Linearly From 25°C 2.6 mW/°C
DETECTOR
Detector Power Dissipation
P
D
All
300 mW
Derate above 25°C 4.0 mW/°C
Parameter Test Conditions Symbol Device Min Typ Max Unit
EMITTER
Input Forward Voltage I
F
= ±10 mA
V
F
All
1.2 1.5 V
Capacitance V
F
= 0 V, f = 1.0 MHz C
J
All 80 pF
DETECTOR
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, I
F
= 0 BV
CEO
All 30
V
Collector to Base I
C
= 100 µA, I
F
= 0 BV
CBO
All 70 V
Emitter to Base I
E
= 100 µA, I
F
= 0 BV
EBO
All 5 V
Emitter to Collector I
E
= 100 µA, I
F
= 0 BV
ECO
All 7 V
Leakage Current
Collector to Emitter V
CE
= 10 V, I
F
= 0 I
CEO
H11AA1,3,4 50
nA
H11AA2 200
Capacitance
Collector to Emitter V
CE
= 0, f = 1 MHz C
CE
All 10
pF
Collector to Base
V
CE
= 0, f = 1 MHz C
CB
All 80
pF
Emitter to Base
V
CE
= 0, f = 1 MHz C
EB
All 15 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ Max Units
Package Capacitance input/output V
I-O
= 0, f = 1 MHz C
I-O
0.7 pF
Isolation Voltage f = 60 Hz, t = 1 min. V
ISO
5300 V
Isolation Resistance V
I-O
= 500 VDC R
ISO
10
11
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ Max Units
H11AA4 100
Current Transfer Ratio,
I
F
= ±10 mA, V
CE
= 10 V CTR
CE
H11AA3 50
%
Collector to Emitter H11AA1 20
H11AA2 10
Current Transfer Ratio, Symmetry I
F
= ±10 mA, V
CE
= 10 V (Figure.8) All .33 3.0 %
Saturation Voltage
I
F
= ±10 mA, I
CE
= 0.5 mA V
CE(SAT)
All .40 V
Collector to Emitter
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
www.fairchildsemi.com 2 OF 7 12/12/01 DS300212
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4
Fig. 2 Normalized CTR vs. Forward Current
I
F
- FORWARD CURRENT (mA)
0 5 10 15 20
N
O
R
MALIZE
D
C
T
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
= 5.0V
T
A
= 25˚C
Fig. 3 Normalized CTR vs. Ambient Temperature
-75 -50 -25 0 25 50 75 100 125
N
O
R
MALIZE
D
C
T
R
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to
I
F
= 10 mA
T
A
= 25˚C
I
F
= 10 mA
I
F
= 20 mA
T
A
- AMBIENT TEMPERATURE (˚C)
I
F
= 5 mA
Normalized to
I
F
= 10 mA
Fig. 5 CTR vs. RBE (Saturated)
R
BE
- BASE RESISTANCE (k W)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 0.3 V
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Fig. 4 CTR vs. RBE (Unsaturated)
R
BE
- BASE RESISTANCE (kW)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 5.0 V
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
I
C
- COLLECTOR CURRENT (mA)
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
I
F
= 2.5 mA
T
A
= 25
˚C
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
Fig. 1 Input Voltage vs. Input Current
V
F
- INPUT VOLTAGE (V)
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
I
F
- INPUT CURRENT (mA)
-100
-80
-60
-40
-20
0
20
40
60
80
100
DS300212 12/12/01 3 OF 7 www.fairchildsemi.com
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4

H11AA23S

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
OPTOISO 5.3KV TRANS W/BASE 6SMD
Lifecycle:
New from this manufacturer.
Delivery:
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