Parameter Test Conditions Symbol Device Min Typ Max Unit
EMITTER
Input Forward Voltage I
F
= ±10 mA
V
F
All
1.2 1.5 V
Capacitance V
F
= 0 V, f = 1.0 MHz C
J
All 80 pF
DETECTOR
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, I
F
= 0 BV
CEO
All 30
V
Collector to Base I
C
= 100 µA, I
F
= 0 BV
CBO
All 70 V
Emitter to Base I
E
= 100 µA, I
F
= 0 BV
EBO
All 5 V
Emitter to Collector I
E
= 100 µA, I
F
= 0 BV
ECO
All 7 V
Leakage Current
Collector to Emitter V
CE
= 10 V, I
F
= 0 I
CEO
H11AA1,3,4 50
nA
H11AA2 200
Capacitance
Collector to Emitter V
CE
= 0, f = 1 MHz C
CE
All 10
pF
Collector to Base
V
CE
= 0, f = 1 MHz C
CB
All 80
pF
Emitter to Base
V
CE
= 0, f = 1 MHz C
EB
All 15 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ Max Units
Package Capacitance input/output V
I-O
= 0, f = 1 MHz C
I-O
0.7 pF
Isolation Voltage f = 60 Hz, t = 1 min. V
ISO
5300 V
Isolation Resistance V
I-O
= 500 VDC R
ISO
10
11
Ω
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ Max Units
H11AA4 100
Current Transfer Ratio,
I
F
= ±10 mA, V
CE
= 10 V CTR
CE
H11AA3 50
%
Collector to Emitter H11AA1 20
H11AA2 10
Current Transfer Ratio, Symmetry I
F
= ±10 mA, V
CE
= 10 V (Figure.8) All .33 3.0 %
Saturation Voltage
I
F
= ±10 mA, I
CE
= 0.5 mA V
CE(SAT)
All .40 V
Collector to Emitter
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
www.fairchildsemi.com 2 OF 7 12/12/01 DS300212
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4