Vishay Siliconix
DG211B, DG212B
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
1
Improved Quad CMOS Analog Switches
FEATURES
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - R
DS(on)
: 50
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: 120 ns
Low charge injection - Q: 1 pC
BENEFITS
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG211, DG212
Space savings (TSSOP)
APPLICATIONS
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
DESCRIPTION
The DG211B, DG212B analog switches are highly improved
versions of the industry-standard DG211, DG212. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG211B and DG212B
can handle up to ± 22 V, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (see Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply.
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND V
L
S
4
S
3
D
4
D
3
IN
4
IN
3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG211B
Dual-In-Line, SOIC and TSSOP
TRUTH TABLE
Logic DG211B DG212B
0 ON OFF
1OFFON
www.vishay.com
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Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
ORDERING INFORMATION
Temp. Range Package Standard Part Number Lead (Pb)-free Part Number
- 40 °C to 85 °C
16-Pin Plastic DIP
DG211BDJ DG211BDJ-E3
DG212BDJ DG212BDJ-E3
16-Pin Narrow SOIC
DG211BDY
DG211BDY-T1
DG211BDY-E3
DG211BDY-T1-E3
DG212BDY
DG212BDY-T1
DG212BDY-E3
DG212BDY-T1-E3
16-Pin TSSOP
DG211BDQ
DG211BDQ-T1
DG211BDQ-E3
DG211BDQ-T1-E3
DG212BDQ
DG212BDQ-T1
DG212BDQ-E3
DG212BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Limit Unit
Voltages Referenced, V+ to V- 44
V
GND 25
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current (Any terminal) 30
mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 125 °C
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
470
mW
16-Pin Narrow SOIC and TSSOP
d
640
Figure 1.
D
X
S
X
V+
IN
X
V-
Level
Shift/
GND
V+
V-
Drive
V
L
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
DG211B, DG212B
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
Full - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
V
D
= ± 10 V, I
S
= 1 mA
Room
Full
45
85
100
R
DS(on)
Match R
DS(on)
Room 2
Source Off Leakage Current I
S(off)
V
S
= ± 14 V, V
D
= ± 14 V
Room
Full
- 0.5
- 5
± 0.01
0.5
5
nADrain Off Leakage Current I
D(off)
V
D
= ± 14 V, V
S
= ± 14 V
Room
Full
- 0.5
- 5
± 0.01
0.5
5
Drain On Leakage Current I
D(on)
V
S
= V
D
= ± 14 V
Room
Full
- 0.5
- 10
± 0.02
0.5
10
Digital Control
Input Voltage High V
INH
Full 2.4
V
Input Voltage Low V
INL
Full 0.8
Input Current I
INH
or I
INL
V
INH
or V
INL
Full - 1 1 µA
Input Capacitance C
IN
Room 5 pF
Dynamic Characteristics
Tu r n - O n T ime t
ON
V
S
= 10 V
see figure 2
Room 300
ns
Turn-Off Time t
OFF
Room 200
Charge Injection Q C
L
= 1000 pF, V
gen
= 0 V, R
gen
= 0 Room 1 pC
Source-Off Capacitance C
S(off)
V
S
= 0 V, f = 1 MHz
Room 5
pFDrain-Off Capacitance C
D(off)
Room 5
Channel-On Capacitance C
D(on)
V
D
= V
S
= 0 V, f = 1 MHz Room 16
Off Isolation OIRR
C
L
= 15 pF, R
L
= 50 
V
S
= 1 V
RMS
, f = 100 kHz
Room 90
dB
Channel-to-Channel Crosstalk X
TA LK
Room 95
Power Supply
Positive Supply Current I+
V
IN
= 0 or 5 V
Room
Full
10
50
µANegative Supply Current I-
Room
Full
- 10
- 50
Logic Supply Current I
L
Room
Full
10
50
Power Supply Range for
Continuous Operation
V
OP
Full ± 4.5 ± 22 V

DG211BDJ

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 781-DG211BDJ-E3
Lifecycle:
New from this manufacturer.
Delivery:
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