V
RRM
= 50 V - 1000 V
I
F
= 4 A
Features
• Types up to 1000 V V
RRM
• Ideal for printed circuit board
• High surge current capability GBL Package
• Glass passivated chip junction
• High case dielectric strength
Mechanical Data
Case: Molded plastic body over passivated junctions
Weight: 0.071 oz, 2 g
Mounting position: Any
• High temperature soldering guaranteed: 250⁰C/ 10
seconds, 0.375(9.5mm) lead length
Terminals: Plated leads, solderable per MIL-STD-750
Method 2026 guaranteed
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
GBL06 thru GBL10
Silicon Bridge
Rectifier
Parameter Symbol Unit
Repetitive peak reverse voltage
V
RRM
V
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
R
thJA
R
thJL
Thermal resistance, junction -
case
°C/W
3.5 3.53.5
22.0 22.0
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 4 A, T
j
= 25 °C
Reverse current
I
R
V
F
V
R
= 50 V, T
j
= 125 °C
500 500
600
5
GBL10
1.1
Conditions
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 25 °C
Conditions
GBL06 GBL08 GBL10
800
560420
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
55
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
GBL06 GBL08
1.1 1.1
-55 to 150
μA
22.0
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
444
150 150 150
600 1000
700
1000
500
800
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