SiZ320DT
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Vishay Siliconix
S17-0302-Rev. A, 27-Feb-17
4
Document Number: 68279
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20
40
60
80
0 0.4 0.8 1.2 1.6 2
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
10
100
1000
10000
0
0.005
0.010
0.015
0.020
0.025
0 20406080
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0246810
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
V
DS
= 6 V
V
DS
= 12.5 V
V
DS
= 20 V
I
D
= 16.6 A
10
100
1000
10000
0
10
20
30
40
50
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
150
300
450
600
750
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.6
0.9
1.1
1.4
1.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
V
GS
= 10 V, I
D
= 16.6 A
V
GS
= 4.5 V,
I
D
= 13.3 A
