CAV93C86YE-GT3

CAV93C86
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4
Device Operation
The CAV93C86 is a 16,384bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAV93C86 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 13bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
14bit instructions control the reading, writing and erase
operations of the device. The CAV93C86 operates on a
single power supply and will generate on chip, the high
voltage required during any write operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation.
The ready/busy status can be determined after the start of
a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the falling edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2bit (or 4bit) opcode, 10bit address
(an additional bit when organized X8) and for write
operations a 16bit data field (8bit for X8 organizations).
Note: The Write, Erase, Write all and Erase all instructions
require PE = 1. If PE is left floating, 93C86 is in Program
Enabled mode. For Write Enable and Write Disable
instruction PE = don’t care.
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAV93C86 will
come out of the high impedance state and, after sending an
initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
).
After the initial data word has been shifted out and CS
remains asserted with the SK clock continuing to toggle, the
device will automatically increment to the next address and
shift out the next data word in a sequential READ mode. As
long as CS is continuously asserted and SK continues to
toggle, the device will keep incrementing to the next address
automatically until it reaches to the end of the address space,
then loops back to address 0. In the sequential READ mode,
only the initial data word is preceeded by a dummy zero bit.
All subsequent data words will follow without a dummy
zero bit.
Write
After receiving a WRITE command, address and the data,
the CS (Chip Select) pin must be deselected for a minimum
of t
CSMIN
. The falling edge of CS will start the self clocking
clear and data store cycle of the memory location specified
in the instruction. The clocking of the SK pin is not
necessary after the device has entered the self clocking
mode. The ready/busy status of the CAV93C86 can be
determined by selecting the device and polling the DO pin.
Since this device features AutoClear before write, it is
NOT necessary to erase a memory location before it is
written into.
CAV93C86
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5
Figure 2. Synchronous Data Timing
SK
DI
CS
DO
VALID VALID
DATA VALID
t
CSS
t
DIS
t
SKHI
t
SKLOW
t
DIS
t
DIH
t
CSH
t
CSMIN
t
PD0
, t
PD1
Figure 3. Read Instruction Timing
SK
CS
DI
DO
HIGHZ
11 0
Dummy 0
Don’t Care
A
N
A
N1
A
0
Address + n
D
15
.
.
.
or
D
7
.
.
.
Address + 2
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
Address + 1
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
111111111111111
Figure 4. Write Instruction Timing
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
101
BUSY
READY
STATUS
t
HZ
t
EW
t
SV
VERIFY
A
N1
A
N
A
0
D
0
D
N
t
CSMIN
CAV93C86
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6
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t
CSMIN
. The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clocking of
the SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the CAV93C86
can be determined by selecting the device and polling the
DO pin. Once cleared, the content of a cleared location
returns to a logical “1” state.
Erase/Write Enable and Disable
The CAV93C86 powers up in the write disable state. Any
writing after powerup or after an EWDS (write disable)
instruction must first be preceded by the EWEN (write
enable) instruction. Once the write instruction is enabled, it
will remain enabled until power to the device is removed, or
the EWDS instruction is sent. The EWDS instruction can be
used to disable all CAV93C86 write and clear instructions,
and will prevent any accidental writing or clearing of the
device. Data can be read normally from the device
regardless of the write enable/disable status.
Erase All
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of t
CSMIN
. The falling
edge of CS will start the self clocking clear cycle of all
memory locations in the device. The clocking of the SK pin
is not necessary after the device has entered the self clocking
mode. The ready/busy status of the CAV93C86 can be
determined by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to a
logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
t
CSMIN
. The falling edge of CS will start the self clocking
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAV93C86 can be determined by selecting the device and
polling the DO pin. It is not necessary for all memory
locations to be cleared before the WRAL command is
executed.
Figure 5. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
1
BUSY
READY
STATUS
11
VERIFY
t
HZ
A
N
A
N1
A
0
t
CS
t
SV
t
EW

CAV93C86YE-GT3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
EEPROM 16KB MICROWIRE SER EEPROM
Lifecycle:
New from this manufacturer.
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