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BC846BPN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
V
BEsat
base-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
- −755 −850 mV
I
C
= −100 mA; I
B
= −5mA - −900 - mV
V
BE
base-emitter voltage V
CE
= −5V
I
C
= −2mA −600 −650 −750 mV
I
C
= −10 mA - - −820 mV
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 2.3 - pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
= 0 A; f = 1 MHz
-10-pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f = 100 MHz
100 - - MHz
NF noise figure V
CE
= −5V;I
C
= −0.2 mA;
R
S
=2kΩ;
f = 10 Hz to 15.7 kHz
- 1.6 - dB
V
CE
= −5V;I
C
= −0.2 mA;
R
S
=2kΩ; f = 1 kHz;
B = 200 Hz
- 2.9 - dB
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aaa533
200
400
600
h
FE
0
I
C
(mA)
10
−2
10
3
10
2
10
−1
101
(3)
(1)
(2)
006aaa532
V
CE
(V)
0108462
0.08
0.12
0.04
0.16
0.20
I
C
(A)
0
I
B
(mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 7 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
V
CE
=5V; T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 6. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
=5V; T
amb
=25°C
Fig 7. TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. TR1 (NPN): Transition frequency as a function
of collector current; typical values
006aaa536
0.6
0.8
1
V
BE
(V)
0.4
I
C
(mA)
10
−1
10
3
10
2
110
006aaa534
I
C
(mA)
10
−1
10
3
10
2
110
0.5
0.9
1.3
0.3
0.7
1.1
V
BEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10
−1
10
V
CEsat
(V)
10
−2
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aaa537
I
C
(mA)
110
2
10
10
2
10
3
f
T
(MHz)
10
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 8 of 15
NXP Semiconductors
BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 9. TR1 (NPN): Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. TR1 (NPN): Emitter capacitance as a function
of emitter-base voltage; typical values
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 12. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
V
CB
(V)
0108462
006aab620
2
4
6
C
c
(pF)
0
006aaa539
V
EB
(V)
0642
9
11
7
13
15
C
e
(pF)
5
006aaa541
200
400
600
h
FE
0
I
C
(mA)
−10
−2
−10
3
−10
2
−10
−1
−10−1
(1)
(2)
(3)
006aaa540
V
CE
(V)
0 −10−8−4 −6−2
−0.08
−0.12
−0.04
−0.16
−0.20
I
C
(A)
0
−0.25
I
B
(mA) = −2.5
−0.5
−0.75
−1.0
−1.25
−1.5
−1.75
−2.0
−2.25
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BC846BPN,115

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANSISTOR 56BS/SOT363/
Lifecycle:
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