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UG10FCTHE3/45

P1-P3P4-P5
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88552
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Soft Recovery Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
300 V to 400 V
I
FSM
60 A
t
rr
35 ns
V
F
at I
F
1.05 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
BYT28, UG10 Series
ITO-220AB
BYT28F, UGF10 Series
BYT28B, UGB10 Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
1
2
K
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYT28-300
UG10FCT
BYT28-400
UG10GCT
UNIT
Maximum repetitive peak reverse voltage V
RRM
300 400 V
Maximum working reverse voltage V
RWM
300 400 V
Maximum RMS voltage V
RMS
210 280 V
Maximum DC blocking voltage V
DC
300 400 V
Maximum average forward rectified current at T
C
= 100 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
60 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88552
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous
forward voltage per diode
I
F
= 5 A
T
J
= 25 °C
V
F
(1)
1.30
VI
F
= 10 A 1.40
I
F
= 5 A T
J
= 150 °C 1.05
Maximum reverse current
per diode at V
RRM
T
J
= 25 °C
I
R
10
μA
T
J
= 100 °C 200
Maximum reverse recovery
time per diode
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
t
rr
35
ns
I
F
= 1.0 A, dI/dt = 100 A/μs, V
R
= 30 V,
I
rr
= 0.1 I
RM
50
Maximum reverse recovery
current per diode
I
F
= 5 A, dI/dt = 50 A/μs, V
R
= 30 V,
T
C
= 100 °C
I
RM
3.0 A
Maximum stored
charge per diode
I
F
= 2 A, dI/dt = 20 A/μs, V
R
= 30 V,
I
rr
= 0.1 I
RM
Q
rr
50 nC
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYT28
UG10
BYT28F
UGF10
BYT28B
UGB10
UNIT
Typical thermal resistance junction to case per diode R
JC
4.5 6.7 4.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB BYT28-400-E3/45 1.80 45 50/tube Tube
ITO-220AB BYT28F-400-E3/45 1.95 45 50/tube Tube
TO-263AB BYT28B-400-E3/45 1.77 45 50/tube Tube
TO-263AB BYT28B-400-E3/81 1.77 81 800/reel Tape and reel
TO-220AB BYT28-400HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AB BYT28F-400HE3/45
(1)
1.95 45 50/tube Tube
TO-263AB BYT28B-400HE3/45
(1)
1.77 45 50/tube Tube
TO-263AB BYT28B-400HE3/81
(1)
1.77 81 800/reel Tape and reel
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88552
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
0
5
15
0
50
100
150
10
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
1
100
10
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 105 °C
8.3 ms Single Half Sine-Wave
100
10
1.0
0.1
0.01
0.2 0.4 0.8 1.4 1.6 1.80.6 1.0 1.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
1.0
10
100
1000
0.1
20
10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
0
25 50
20
40
60
80
100
120
75 100 125
Junction Temperature (°C)
at 5 A, 50 A/μs
at 2 A, 20 A/μs
at 5 A, 50 A/μs
at 1 A, 100 A/μs
at 2 A, 20 A/μs
t
rr
Q
rr
Stored Charge/Reverse Recovery Time
(nC/ns)
101
100
10
100
1
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

UG10FCTHE3/45

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Buy UG10FCTHE3/45
Manufacturer:
Vishay
Description:
Rectifiers 300 Volt 10 Amp 35ns Dual 60 Amp IFSM
Lifecycle:
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