PESD5V0S1UA_PESD12VS1UA_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 9 February 2009 3 of 14
NXP Semiconductors
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Soldering point of cathode tab.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[1] Device stressed with ten non-repetitive ESD pulses.
P
tot
total power dissipation T
amb
≤ 25 °C
[3]
- 360 mW
[4]
- 500 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1]
-30kV
machine model - 400 V
MIL-STD-883 (human
body model)
-16kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
