PHC2300,118 Datasheet PHC2300,118 | P7-P9

Product data sheet Rev. 05 — 24 February 2011 6 of 14

NXP Semiconductors

PHC2300

Complementary enhancement mode MOS transistors

C

rss

reverse transfer

capacitance

V

DS

=50V; V

GS

= 0 V; f = 1 MHz;

T

j

= 25 °C; N-channel

-7.3-pF

V

DS

=-50V; V

GS

= 0 V; f = 1 MHz;

T

j

= 25 °C; P-channel

-3-pF

t

on

turn-on time V

DS

=50V; V

GS

=10V; I

D

= 170 mA;

T

j

= 25 °C; N-channel

- 7 12 ns

V

DS

=-50V; V

GS

=-10V; I

D

=-115mA;

T

j

= 25 °C; P-channel

- 4 10 ns

t

off

turn-off time V

DS

=50V; V

GS

=10V; T

j

=25°C;

I

D

= 170 mA; N-channel

- 5365ns

V

DS

=-50V; V

GS

=-10V; T

j

=25°C;

I

D

= -115 mA; P-channel

- 2535ns

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

T

amb

= 25 °C; t

p

= 80 μs; δ = 0.

T

amb

= 25 °C; t

p

= 80 μs; δ = 0.

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; N-channel;

typical values

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; P-channel;

typical values

0

V

DS

(V)

4812

mld841

1200

0

400

800

I

D

(mA)

3 V

2 V

V

GS

= 10 V

5 V

4 V

3.5 V

2.5 V

0 −2 −4 −6 −8 −10 −12

−600

−800

−400

0

−200

mbh441

V

DS

(V)

I

D

(mA)

V

GS

= −10 V

−4.5 V

−4.0 V

−3.5 V

−3.0 V

−2.5 V

−2.0 V

Product data sheet Rev. 05 — 24 February 2011 7 of 14

NXP Semiconductors

PHC2300

Complementary enhancement mode MOS transistors

V

DS

= 10 V; T

amb

= 25 °C; t

p

= 80 μs; δ = 0.

V

DS

= -10 V; T

amb

= 25 °C; t

p

= 80 μs; δ = 0.

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; N-channel;

typical values

Fig 8. Transfer characteristics: drain current as a

function of gate-source voltage; P-channel;

typical values

V

DS

= 50 V; I

D

= 170 mA; T

amb

= 25 °C.

(1) V

DS

(2) V

GS

Fig 9. Input, output and reverse transfer capacitances

as a function of drain-source voltage;

N-channel; typical values

Fig 10. Gate-source voltage and drain-source voltage

as a function of gate charge; N-channel typical

values

010

1200

0

400

800

2

I

D

(mA)

V

GS

(V)

468

mld842

0 −2 −4 −6 −8 −10

−200

−400

−600

−800

0

mbh440

V

GS

(V)

I

D

(mA)

05 25

200

150

50

0

100

10

V

DS

(V)

C

(pF)

15 20

mld843

C

rss

C

oss

C

iss

0

(1) (2)

1560

Q

G

(pC)

V

GS

(V)

3120 6240

12

0

4

8

4680

mld844

V

DS

(V)

50

37.5

12.5

0

25

Product data sheet Rev. 05 — 24 February 2011 8 of 14

NXP Semiconductors

PHC2300

Complementary enhancement mode MOS transistors

V

DS

= -50 V; I

D

= -115 mA; T

amb

= 25 °C.

(1) V

DS

(2) V

GS

Fig 11. Gate-source voltage and drain-source voltage

as a function of gate charge; P-channel typical

values

Fig 12. Source current as a function of source-drain

voltage; P-channel typical values

V

DS

≥ I

D

X R

DSon

; T

amb

= 25 °C; t

p

= 300 μs; δ = 0.

(1) I

D

= 10 mA.

(2) I

D

= 20 mA.

(3) I

D

= 50 mA.

(4) I

D

= 100 mA.

(5) I

D

= 200 mA.

V

DS

≥ I

D

X R

DSon

; T

amb

= 25 °C; t

p

= 300 μs; δ = 0.

(1) I

D

= -10 mA.

(2) I

D

= -20 mA.

(3) I

D

= -50 mA.

(4) I

D

= -100 mA.

(5) I

D

= -200 mA.

Fig 13. Drain-source on-state resistance as a function

of gate-source voltage; N-channel typical

values

Fig 14. Drain-source on-state resistance as a function

of gate-source voltage; P-channel typical

values

0

(1) (2)

535

Q

G

(pC)

V

GS

(V)

1070 2140

12

0

4

8

1605

mld845

V

DS

(V)

50

37.5

12.5

0

25

0 −0.4 −0.8 −1.2

−0.5

0

−0.4

−0.3

−0.2

−0.1

mda239

I

SD

(A)

V

SD

(V)

1002

V

GS

(V)

R

DSon

(Ω)

468

10

2

10

1

mld846

(1)

(2)

(3)

(4)

(5)

−100 −2 −4 −6 −8

10

2

10

1

mda233

R

DSon

(Ω)

V

GS

(V)

(1)

(2)

(3)

(4)

(5)

PHC2300,118

PHC2300,118

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