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SZESD7462N2T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
January, 2017 − Rev. 1
1 Publication Order Number:
ESD7462/D
ESD7462, SZESD7462
Ultra-Low Capacitance ESD
Protection
Micro−Packaged Diodes for ESD Protection
The ESD7462 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. It has industry leading capacitance linearity over voltage
making it ideal for RF applications. This capacitance linearity
combined with the extremely small package and low insertion loss
makes this part well suited for use in antenna line applications for
wireless handsets and terminals.
Features
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: 0.3 pF Typ
• Insertion Loss: 0.05 dB at 1 GHz; 0.10 dB at 3 GHz
• Low Leakage: < 1 nA Typ
• Protection for the following IEC Standards:
♦ IEC61000−4−2 (ESD): Level 4
♦ IEC61000−4−4 (EFT): 40 A −5/50 ns
♦ IEC61000−4−5 (Lightning): 1 A (8/20 ms)
• Protection for ISO 10605 (ESD)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
IEC 61000−4−2 Contact (Note 1)
IEC 61000−4−2 Air
ISO 10605 Contact (330 pF / 330 W)
ISO 10605 Contact (330 pF / 2 kW)
ISO 10605 Contact (150 pF / 2 kW)
ESD ±18
±18
±13
±29
±30
kV
Total Power Dissipation (Note 2) @ T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
°P
D
°
R
q
JA
300
400
mW
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T
A
= 25°C, per IEC61000−4−2 waveform.
2. Mounted with recommended minimum pad size, DC board FR−4
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
ESD7462N2T5G X2DFN2
(Pb−Free)
8000 / Tape &
Reel
MARKING
DIAGRAM
4 = Specific Device Code
M = Date Code
X2DFN2
CASE 714AB
4 M
G
SZESD7462N2T5G X2DFN2
(Pb−Free)
8000 / Tape &
Reel
ESD7462, SZESD7462
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Reverse Working Voltage V
RWM
16 V
Breakdown Voltage V
BR
I
T
= 1 mA (Note 3) 16.5 22 28 V
Reverse Leakage Current I
R
V
RWM
= 5 V 100 nA
Clamping Voltage V
C
IEC 61000−4−2, ±8 kV Contact See Figures 1 and 2 V
Clamping Voltage, TLP (Note 4) V
C
I
PP
= ±8 A
I
PP
= ±16 A
±34
±47
V
Dynamic Resistance R
DYN
TLP Pulse 1.6
W
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 GHz
0.30
0.25
0.55
0.55
pF
Insertion Loss f = 1 GHz
f = 3 GHz
0.05
0.10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
Figure 1. Typical IEC61000−4−2 +8 kV Contact
ESD Clamping Voltage
Figure 2. Typical IEC61000−4−2 −8 kV Contact
ESD Clamping Voltage
180
160
140
120
100
80
60
40
20
−20
−25 1750 12525 10075
VOLTAGE (V)
TIME (ns)
20
175
VOLTAGE (V)
TIME (ns)
0
−20
−80
−100
−160
−25 0 25 50 75 150125100
0
50 150
−40
−60
−120
−140
ESD7462, SZESD7462
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. Typical IV Characteristic Curve Figure 4. Typical CV Characteristic Curve
1.E−03
−24 24−16 0
CURRENT (A)
VOLTAGE (V)
BIAS VOLTAGE (V)
CAPACITANCE (pF)
−10 10−6 62−2
0.50
0.45
0.40
0.30
0.25
0.20
0.15
0.10
0.05
0
−8 8 16
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
1.E−13
0.35
0.55
f = 1 MHz
Figure 5. Typical Insertion Loss Figure 6. Typical Capacitance Over Frequency
1
1.E+07
S21 (dB)
FREQUENCY (Hz)
FREQUENCY (Hz)
CAPACITANCE (pF)
0.0E+00
0.50
0.45
0.40
0.30
0.25
0.20
0.15
0.10
0.05
0
0
−1
−2
−4
−5
−6
−7
−8
−9
−10
0.35
0.55
VR = 0 V
1.E+08 1.E+09 1.E+10
−3
1.0E+09 2.0E+09 3.0E+09
P1-P3P4-P6

SZESD7462N2T5G

Mfr. #:
Buy SZESD7462N2T5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 16V ESD PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
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