TTC008(Q) Datasheet TTC008(Q) | P1-P3

TTC008

1

Bipolar Transistors Silicon NPN Triple-Diffused Type

TTC008

Start of commercial production

2010-05

1.

1. Applications

Applications

• High-Speed High-Voltage Switching

• Switching Voltage Regulators

• High-Speed DC-DC Converters

2.

2. Features

Features

(1) High collector-emitter voltage: V

CEO

= 285 V, V

CES

= 600 V

(2) High DC current gain: h

FE

= 100 to 200 (I

C

= 0.3 A)

(3) Excellent switching times: t

f

= 0.1 µs (typ.)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

New PW-Mold2

1. Base

2. Collector

3. Emitter

2014-04-03

Rev.2.0

TTC008

2

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

Collector power dissipation

Junction temperature

Storage temperature

(Note 1)

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

j

T

stg

Rating

600

285

7

1.5

3

0.75

1.1

150

-55 to 150

Unit

V

A

W



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 .

2014-04-03

Rev.2.0

TTC008

3

5.

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

Test Condition

V

CB

= 600 V, I

E

= 0 A

V

EB

= 7 V, I

C

= 0 A

I

C

= 1 mA, I

E

= 0 A

I

C

= 10 mA, I

B

= 0 A

V

CE

= 5 V, I

C

= 1 mA

V

CE

= 5 V, I

C

= 0.3 A

I

C

= 0.5 A, I

B

= 62.5 mA

I

C

= 0.5 A, I

B

= 62.5 mA

Min



600

285

80

100



Typ.



Max

10

100



250

200

1.0

1.3

Unit

µA

nA

V



V

5.2.

5.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Switching time (rise time)

Switching time (storage time)

Switching time (fall time)

Symbol

t

r

t

stg

t

f

Test Condition

See Figure 5.2.1.

Min



Typ.

0.05

3.3

0.1

Max



Unit

µs

Fig.

Fig. 5.2.1

5.2.1

5.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.

6. Marking (Note)

Marking (Note)

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

Note: A line under a Lot No. identifies the indication of product Labels.

Not underlined: `Pb`/INCLUDES > MCV

Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

2014-04-03

Rev.2.0

TTC008(Q)

TTC008(Q)

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