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BYT54J-TAP

P1-P3P4-P4
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
1
Document Number: 86031
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification and switching diodes
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYT54M BYT54M-TR 5000 per 10" tape and reel 25 000
BYT54M BYT54M-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT54A V
R
= 50 V; I
F(AV)
= 1.25 A SOD-57
BYT54B V
R
= 100 V; I
F(AV)
= 1.25 A SOD-57
BYT54D V
R
= 200 V; I
F(AV)
= 1.25 A SOD-57
BYT54G V
R
= 400 V; I
F(AV)
= 1.25 A SOD-57
BYT54J V
R
= 600 V; I
F(AV)
= 1.25 A SOD-57
BYT54K V
R
= 800 V; I
F(AV)
= 1.25 A SOD-57
BYT54M V
R
= 1000 V; I
F(AV)
= 1.25 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYT54A V
R
= V
RRM
50 V
BYT54B V
R
= V
RRM
100 V
BYT54D V
R
= V
RRM
200 V
BYT54G V
R
= V
RRM
400 V
BYT54J V
R
= V
RRM
600 V
BYT54K V
R
= V
RRM
800 V
BYT54M V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
30 A
Average forward current
On PC board I
F(AV)
0.75 A
l = 10 mm I
F(AV)
1.25 A
Non repetitive reverse avalanche energy I
(BR)R
= 0.4 A
BYT54J E
R
10 mJ
BYT54K E
R
10 mJ
BYT54M E
R
10 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
2
Document Number: 86031
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART
SYMBO
L
MIN. TYP. MAX. UNIT
Forward voltage I
F
= 1 A V
F
--1.5V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 150 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 100 ns
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949552
ll
T
L
= constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.52.0 3.0 3.5
V
F
- Forward Voltage (V)
16338
T
j
= 25 °C
T
j
= 175 °C
16339
I
FAV
- Average Forward Current (A)
0 20406080100120140160180
T
amb
- Ambient Temperature (°C)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
R
= V
RRM
half sinewave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16340
I
R
- Reverse Current (μA)
V
R
= V
RRM
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
3
Document Number: 86031
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
250
100
300
150
350
200
400
450
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16341
P
R
- Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
5
10
15
20
25
30
35
0.1 1 10 100
V
R
- Reverse Voltage (V)
16342
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.
P1-P3P4-P4

BYT54J-TAP

Mfr. #:
Buy BYT54J-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 0.75 Amp 30 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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