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KSC2756RMTF

P1-P3P4-P5
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2756
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 20 V
V
EBO
Emitter-Base Voltage 4 V
I
C
Collector Current 30 mA
P
C
Collector Power Dissipation 150 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=20V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=10V, I
C
=5mA 60 120 240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.5 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=5mA 500 850 MHz
C
RE
Reverse Transfer Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.35 0.5 pF
G
CE
Conversion Gain V
CE
=10V, I
C
=3mA
f
RF
=200MHz, f
IF
=58MHz
15 23 dB
NF Noise Figure V
CE
=10V, I
C
=3mA
f
RF
=200MHz, f
IF
=58MHz
6.5 dB
Classification R O Y
h
FE
60 ~ 120 90 ~ 180 120 ~ 240
1. Base 2. Emitter 3. Collector
KSC2756
Mixer for VHF TV Tuner
• High Conversion Gain : G
CE
= 23dB (TYP.)
H2O
Marking
h
FE
grade
1
2
3
SOT-23
©2002 Fairchild Semiconductor Corporation
KSC2756
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Charateristics Figure 2. DC Current Gain
Figure 3. Saturation Voltage Figure 4. f
T
- I
C
Figure 5. Cre - V
CB
Figure 6. Power Derating
048121620
0
2
4
6
8
10
I
B
= 90
µ
A
I
B
= 20
µ
A
I
B
= 80
µ
A
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 10
µ
A
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
1
10
100
1000
V
CE
= 10V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
I
C
= 10 I
B
V
BE
(sat)
V
CE
(sat)
V
CE
(sat)[mV], SATURATION VOLTAGE
V
BE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
V
CE
= 10 V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
f = 1 MHz
I
E
= 0
C
re
[pF], REVERSE TRANSFER CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0 25 50 75 100 125 150 175 200
0
50
100
150
200
P
C
[mW], POWER DISSIPATION
Ta[
o
C], AMBIENT TEMPERATURE
©2002 Fairchild Semiconductor Corporation
KSC2756
Rev. A2, September 2002
Typical Characteristics
(Continued)
Figure 7. yie - f Figure 8. yre - f
Figure 9. Figure 10. yoe - f
Figure 11. NF, G
CE
- OSC Level Figure 12. Conversion Gain
0 204060
0
20
40
60
yid=g
ie
+ jb
ie
V
CE
=10V
10mA
400MHz
300MHz
200 MHz
f = 100 MHz
5mA
Ic=3mA
b
ie
[ms], SUSCEPTANCE
g
ie
[ms], CONDUCTANCE
-0.2 0.0 0.2 0.4 0.6 0.8
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
yre=g
re
+ jb
re
V
CE
=10V
10mA
5mA
I
C
=3mA
f=100MHz
400MHz
300MHz
200MHz
b
re
[ms], SUSCEPTANCE
g
re
[ms], CONDUCTANCE
-50 0 50 100 150 200 250
-150
-120
-90
-60
-30
0
30
yfe=g
fe
+ jb
fe
V
CE
=10V
3mA
5mA
200MHz
300MHz
400MHz
f=100MHz
I
C
=10mA
b
fe
[ms], SUSCEPTANCE
g
fe
[ms], CONDUCTANCE
0.0 0.2 0.4 0.6 0.8 1.0
0
1
2
3
4
5
yoe=g
oe
+ jb
oe
V
CE
=10V
10mA
400MHz
300MHz
200MHz
f=100MHz
5mA
I
C
=3mA
b
oe
[ms], SUSCEPTANCE
g
oe
[ms], CONDUCTANCE
90 100 110
5
10
15
[dBuV/50ohm], OSC LEVEL
NF[dB], NOISE FIGURE
5
10
15
20
25
f
RF
= 200MHz, 80dBuV/50ohm
f
Local
= 258MHz
NF
Gce
G
CE
[dB], CONVERSION GAIN
0510
0
4
8
12
16
20
24
f
RF
= 200 MHz, 80 dBuV/50ohm
f
Local
= 258 MHz, 105 dBuV/50ohm
at SG OUTPUT LEVEL
Gce [dB], CONVERSION GAIN
I
C
[mA], COLLECTOR CURRENT
P1-P3P4-P5

KSC2756RMTF

Mfr. #:
Buy KSC2756RMTF
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Transistor
Lifecycle:
New from this manufacturer.
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