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BC857BV,115

P1-P3P4-P6P7-P9
2001 Nov 07 3
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −45 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
2001 Nov 07 4
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= −30 V − − −15 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C − − −5 μA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= −5 V − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V 200 − 450
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V −600 −655 −750 mV
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA − − −100 mV
I
C
= −100 mA; I
B
= −5. mA; note 1 − − −400 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − −755 − mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − − 2.2 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −500 mV;
f
= 1 MHz
− 10 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V;
f
= 100 MHz
100 − − MHz
2001 Nov 07 5
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BV
Graphical information BC857BV
handbook, halfpage
0
1000
200
400
600
800
MHB975
−10
−2
−10
−1
110
I
C
(mA)
h
FE
10
2
10
3
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−0
−1200
−1000
−400
−200
−800
−600
MHB976
−10
−2
−10
−1
−1 −10
V
BE
(mV)
I
C
(mA)
−10
2
−10
3
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MHB977
−10
−1
−1 −10
V
CEsat
(mV)
I
C
(mA)
−10
2
−10
3
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
−1200
−1000
−400
−200
−800
−600
MHB978
−10
−1
−1 −10
V
BEsat
(mV)
I
C
(mA)
−10
2
−10
3
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9

BC857BV,115

Mfr. #:
Buy BC857BV,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
Lifecycle:
New from this manufacturer.
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