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BUX84-S

P1-P3P4-P5
BUX84
NPN SILICON POWER TRANSISTOR
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
MAXIMUM SAFE OPERATING REGIONS
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
5·00·1 1·0
h
FE
- Typical DC Current Gain
1·0
10
100
TCP741AJ
V
CE
= 5 V
T
C
= 25°C
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
-60-30 0 306090120150
I
CES
- Collector Cut-off Current - µA
0·001
0·01
0·1
1·0
10
TCP741AK
V
CE
= 800 V
V
BE
= 0
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0.01
0·1
1·0
10
SAP770AB
OBSOLETE
BUX84
NPN SILICON POWER TRANSISTOR
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 6.
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
t
1
- Power Pulse Duration - s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Z
θJC
/
R
θJC
- Normalised Transient Thermal Impedance
0·01
0·1
1·0
TCP741AL
5%
10%
20%
50%
t1
t2
duty cycle = t1/t2
Read time at end of t1,
T
J(max)
- T
C
= P
D(peak)
·
· R
θJC(max)
Z
θJC
R
θJC
( )
OBSOLETE
P1-P3P4-P5

BUX84-S

Mfr. #:
Buy BUX84-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 800V 2A NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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