Table 14: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision B)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
774 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
990 mA
Precharge standby current I
DD2N
612 mA
Precharge standby ODT current I
DD2NT
900 mA
Precharge power-down current I
DD2P
450 mA
Precharge quiet standby current I
DD2Q
540 mA
Active standby current I
DD3N
684 mA
Active standby I
PP
current I
PP3N
54 mA
Active power-down current I
DD3P
576 mA
Burst read current I
DD4R
1980 mA
Burst write current I
DD4W
1854 mA
Burst refresh current (1x REF) I
DD5R
954 mA
Burst refresh I
PP
current (1x REF) I
PP5R
90 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
540 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
630 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
360 mA
Auto self refresh current (25°C) I
DD6A
154.8 mA
Auto self refresh current (45°C) I
DD6A
360 mA
Auto self refresh current (75°C) I
DD6A
540 mA
Auto self refresh I
PP
current I
PP6X
90 mA
Bank interleave read current I
DD7
3330 mA
Bank interleave read I
PP
current I
PP7
324 mA
Maximum power-down current I
DD8
450 mA
16GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
I
DD
Specifications
CCMTD-1725822587-9912
adf18c2gx72pz.pdf - Rev. F 4/17 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 15: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 2666 Units
One bank ACTIVATE-PRECHARGE current I
DD0
824 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1044 mA
Precharge standby current I
DD2N
630 mA
Precharge standby ODT current I
DD2NT
900 mA
Precharge power-down current I
DD2P
450 mA
Precharge quiet standby current I
DD2Q
540 mA
Active standby current I
DD3N
828 mA
Active standby I
PP
current I
PP3N
54 mA
Active power-down current I
DD3P
612 mA
Burst read current I
DD4R
2178 mA
Burst write current I
DD4W
2196 mA
Burst refresh current (1x REF) I
DD5R
1098 mA
Burst refresh I
PP
current (1x REF) I
PP5R
90 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
558 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
648 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
378 mA
Auto self refresh current (25°C) I
DD6A
154.8 mA
Auto self refresh current (45°C) I
DD6A
378 mA
Auto self refresh current (75°C) I
DD6A
558 mA
Auto self refresh I
PP
current I
PP6X
90 mA
Bank interleave read current I
DD7
3600 mA
Bank interleave read I
PP
current I
PP7
324 mA
Maximum power-down current I
DD8
450 mA
16GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
I
DD
Specifications
CCMTD-1725822587-9912
adf18c2gx72pz.pdf - Rev. F 4/17 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 16: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision E)
Values are for the MT40A2G4 DDR4 SDRAM only and are computed from values specified in the 8Gb (2 Gig x 4) compo-
nent data sheet
Parameter Symbol 3200 Units
One bank ACTIVATE-PRECHARGE current I
DD0
936 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1152 mA
Precharge standby current I
DD2N
666 mA
Precharge standby ODT current I
DD2NT
1080 mA
Precharge power-down current I
DD2P
450 mA
Precharge quiet standby current I
DD2Q
540 mA
Active standby current I
DD3N
936 mA
Active standby I
PP
current I
PP3N
54 mA
Active power-down current I
DD3P
684 mA
Burst read current I
DD4R
2754 mA
Burst write current I
DD4W
2430 mA
Burst refresh current (1x REF) I
DD5R
1188 mA
Burst refresh I
PP
current (1x REF) I
PP5R
90 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
612 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
828 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
378 mA
Auto self refresh current (25°C) I
DD6A
154.8 mA
Auto self refresh current (45°C) I
DD6A
378 mA
Auto self refresh current (75°C) I
DD6A
558 mA
Auto self refresh I
PP
current I
PP6X
90 mA
Bank interleave read current I
DD7
4140 mA
Bank interleave read I
PP
current I
PP7
360 mA
Maximum power-down current I
DD8
450 mA
16GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
I
DD
Specifications
CCMTD-1725822587-9912
adf18c2gx72pz.pdf - Rev. F 4/17 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MTA18ADF2G72PZ-2G6D1

Mfr. #:
Manufacturer:
Micron
Description:
DDR4 SDRAM VLP RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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