VS-STPS40L15CTPBF

VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 20 A
FEATURES
125 °C T
J
operation (V
R
< 5 V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 20 A
V
R
15 V
V
F
at I
F
See Electrical table
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
Diode variation Common cathode
E
AS
10 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (per leg, typical) 0.25 V
T
J
- 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS40L15CTPbF VS-STPS40L15CT-N3 UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 85 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop per leg
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
-0.41
V
40 A - 0.52
19 A
T
J
= 125 °C
0.25 0.33
40 A 0.37 0.50
Reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.182 V
Forward slope resistance r
t
7.6 m:
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(only for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
(for D
2
PAK and TO-262)
40
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB STPS40L15CT
VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
3
Document Number: 94330
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
1.60.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.8 1.0
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
1.2 1.4
1000
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
15
12369
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
1000
010
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
51520
10 000
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 10
0.01
Single pulse
(thermal resistance)
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100

VS-STPS40L15CTPBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-STPS40L15CT-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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