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NTMS5P02R2G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 3
1 Publication Order Number:
NTMS5P02R2/D
NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
Features
• High Density Power MOSFET with Ultra Low R
DS(on)
Providing Higher Efficiency
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SOIC−8 Package is Provided
• These Devices are Pb−Free and are RoHS Compliant
• NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
Device Package
ORDERING INFORMATION
NTMS5P02R2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
Single P−Channel
D
S
G
http://onsemi.com
V
DSS
R
DS(ON)
TYP I
D
MAX
−20 V
26 mW @ −4.5 V
−5.4 A
SOIC−8
CASE 751
STYLE 13
MARKING DIAGRAM &
PIN ASSIGNMENT
E5P02 = Specific Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
E5P02x
AYWW G
G
1
8
NC S S G
DD DD
(Note: Microdot may be in either location)
1
8
NVMS5P02R2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
Shipping
†
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
NTMS5P02, NVMS5P02
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Drain−to−Gate Voltage (R
GS
= 1.0 mW)
V
DGR
−20 V
Gate−to−Source Voltage − Continuous V
GS
±10 V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
50
2.5
−7.05
−5.62
1.2
−4.85
−28
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
85
1.47
−5.40
−4.30
0.7
−3.72
−20
°C/W
W
A
A
W
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
R
q
JA
P
D
I
D
I
D
P
D
I
D
I
DM
159
0.79
−3.95
−3.15
0.38
−2.75
−12
°C/W
W
A
A
W
A
A
Operating and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= −20 Vdc, V
GS
= −5.0 Vdc, Peak I
L
= −8.5 Apk, L = 10 mH, R
G
= 25 W)
E
AS
360 mJ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
NTMS5P02, NVMS5P02
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
−20
−
−
−15
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= −16 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= −16 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
(V
DS
= −20 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
I
DSS
−
−
−
−
−
−0.2
−1.0
−10
−
mAdc
Gate−Body Leakage Current
(V
GS
= −10 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +10 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
−0.65
−
−0.9
2.9
−1.25
−
Vdc
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= −4.5 Vdc, I
D
= −5.4 Adc)
(V
GS
= −2.5 Vdc, I
D
= −2.7 Adc)
R
DS(on)
−
−
0.026
0.037
0.033
0.048
W
Forward Transconductance (V
DS
= −9.0 Vdc, I
D
= −5.4 Adc) g
FS
− 15 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 1375 1900 pF
Output Capacitance C
oss
− 510 900
Reverse Transfer Capacitance C
rss
− 200 380
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn−On Delay Time
(V
DD
= −16 Vdc, I
D
= −1.0 Adc,
V
GS
= −4.5 Vdc,
R
G
= 6.0 W)
t
d(on)
− 18 35
ns
Rise Time t
r
− 25 50
Turn−Off Delay Time t
d(off)
− 70 125
Fall Time t
f
− 55 100
Turn−On Delay Time
(V
DD
= −16 Vdc, I
D
= −5.4 Adc,
V
GS
= −4.5 Vdc,
R
G
= 6.0 W)
t
d(on)
− 22 −
ns
Rise Time t
r
− 70 −
Turn−Off Delay Time t
d(off)
− 65 −
Fall Time t
f
− 90 −
Total Gate Charge
(V
DS
= −16 Vdc,
V
GS
= −4.5 Vdc,
I
D
= −5.4 Adc)
Q
tot
− 20 35
nC
Gate−Source Charge Q
gs
− 4.0 −
Gate−Drain Charge Q
gd
− 7.0 −
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage (I
S
= −5.4 Adc, V
GS
= 0 V)
(I
S
= −5.4 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−0.95
−0.72
−1.25
−
Vdc
Reverse Recovery Time
(I
S
= −5.4 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
− 40 75
ns
t
a
− 20 −
t
b
− 20 −
Reverse Recovery Stored Charge Q
RR
− 0.03 −
mC
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
P1-P3P4-P6P7-P7

NTMS5P02R2G

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Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -5.4A P-Channel
Lifecycle:
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